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Method of forming fin bipolar junction transistor

A bipolar junction and transistor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as poor performance of fin bipolar junction transistors, and achieve the effect of avoiding the reduction of total current

Active Publication Date: 2019-07-30
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, as the feature size is further reduced, the performance of the fin bipolar junction transistor formed by the prior art is poor

Method used

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  • Method of forming fin bipolar junction transistor
  • Method of forming fin bipolar junction transistor
  • Method of forming fin bipolar junction transistor

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Embodiment Construction

[0032] As the feature size shrinks further, the performance of the fin BJT formed by the prior art is poor.

[0033] An embodiment of the present invention provides a method for forming a fin bipolar junction transistor, referring to Figure 1 to Figure 3 , figure 2 for along figure 1 The cross-sectional view of the Y1-Y2 axis in the middle, image 3 for in figure 2 The schematic diagram formed on the basis includes: providing a semiconductor substrate 100; forming a plurality of parallel emitter fins 110, a plurality of parallel base fins 120 and a plurality of parallel collector fins 130 on the surface of the semiconductor substrate 100, The plurality of base fins 120 surrounds the plurality of emitter fins 110, the plurality of collector fins 130 surrounds the plurality of base fins 120, and the emitter fins 110, the base fins 120, and the collector fins 130 are parallel to each other; an emitter epitaxial layer 111 is formed on the surface of the emitter fin 110 ; a ...

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Abstract

A method for forming a fin-type bipolar junction transistor comprises the steps of providing a semiconductor substrate; forming collector fins, base fins and emitter fins on the surface of the semiconductor substrate, the base fins being located between the collector fins and the emitter fins, and the collector fins, the base fins and the emitter fins being parallel to one another; forming a base epitaxial layer on the surface of each base fin; forming a collector epitaxial layer on the surface of each collector fin; doping base fin ions in the base fins and the base epitaxial layers; doping collector fin ions in the collector fins and the collector epitaxial layers; and doping first and second emitter ions in the emitter fins, the second emitter ions being located at the top of the emitter fins, the first emitter ions being located at the bottom of the second emitter ions, and the second emitter ions having a concentration greater than that of the first emitter ions. The method of forming the fin-type bipolar junction transistor improves the performance of the fin-type bipolar junction transistor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a fin bipolar junction transistor. Background technique [0002] A bipolar junction transistor (Bipolar Junction Transistor, BJT) is also called a semiconductor triode. It is composed of two PN junctions that are adjacent to each other and back to back. It is divided into two combined structures: PNP and NPN. A bipolar junction transistor has three poles: collector, emitter, and base. The bipolar junction transistor has the function of amplifying the signal, which is mainly realized by the fact that the emitter current can be transmitted through the base region to the collector region. Bipolar transistors are widely used because of their ability to amplify signals, better power control, high-speed operation, and endurance capabilities. [0003] MOS transistors are one of the most important components in modern integrated circuits. MOS transistors...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/66H01L29/08
CPCH01L29/0808H01L29/6625
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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