Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming perpendicular brittle material substrate and brittle material substrate dividing method

A technology for brittle material substrates and vertical cracks, applied in glass cutting devices, stone processing tools, stone processing equipment, etc., can solve the problem of partial extension of vertical cracks and achieve reliable segmentation effects

Inactive Publication Date: 2017-02-15
MITSUBOSHI DIAMOND IND CO LTD
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When a scribe line is formed, there are cases where the vertical crack fully expands in the thickness direction and divides the substrate, but there is also a case where the vertical crack only partially expands in the thickness direction

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming perpendicular brittle material substrate and brittle material substrate dividing method
  • Method for forming perpendicular brittle material substrate and brittle material substrate dividing method
  • Method for forming perpendicular brittle material substrate and brittle material substrate dividing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037]

[0038] figure 1 It is a diagram schematically showing the configuration of the scribing device 100 used in the embodiment of the present invention. The scribing device 100 is generally used when dividing a brittle material substrate W such as a glass substrate, a ceramic substrate, or a semiconductor substrate at a predetermined dividing position in the thickness direction DT for downsizing, but in this embodiment, the scribing The apparatus 100 is to extend the vertical crack at the dividing position on the one main surface SF1 side of the brittle material substrate W, and the auxiliary line AL( Figure 6 etc. used for the formation of reference). In addition, in the present embodiment, the auxiliary line AL refers to the groove line TL formed at the division position on the side of the main surface SF1 (refer to image 3 etc.) are formed at the intersection position, and the vertical crack extends directly below the groove line TL as the starting point (trigger ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

There is provided a vertical crack forming method and a dividing method in a brittle material substrate, which can form a vertical crack on a brittle material substrate with high reliability. A method of forming a vertical crack on a brittle material substrate, comprising: a groove forming step of forming a groove line as a linear groove on a main surface; and an auxiliary line forming step of forming a groove And the outer circumference of the screed wheel is provided with a plurality of grooves arranged at equal intervals at intervals, and in the groove forming step, a groove line is formed so as to maintain a crack-free state in a straight line, In the forming step, a plurality of grooves are formed using a plurality of grooves formed on the outer circumference asymmetrically with respect to the outer circumference to form an auxiliary line, and the intersection of the two lines is used as a starting point for extending the vertical crack from the trough line.

Description

technical field [0001] The present invention relates to a method for dividing a brittle material substrate, and in particular, to a method for forming a vertical crack when dividing a brittle material substrate. Background technique [0002] The manufacturing process of a flat panel display panel, a solar cell panel, etc. generally includes a process of dividing a substrate (mother substrate) made of a brittle material such as a glass substrate, a ceramic substrate, or a semiconductor substrate. For this division, a method of forming a scribe line on the surface of the substrate with a scribing tool such as a diamond stone or a cutting wheel, and extending cracks (vertical cracks) from the scribe line in the thickness direction of the substrate is widely used. When scribe lines are formed, there are cases where the vertical cracks fully extend in the thickness direction and divide the substrate, but there are also cases where the vertical cracks only partially extend in the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00B28D5/02B28D1/22C03B33/10
CPCB28D1/225B28D5/0011B28D5/0029B28D5/022C03B33/10B26F3/002B28D1/04B28D1/20B28D1/24C03B33/023C03B33/033
Inventor 岩坪佑磨曾山浩
Owner MITSUBOSHI DIAMOND IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com