Selective hydrodesulfurization catalyst and desulfurization method
A hydrodesulfurization and selective technology, applied in chemical instruments and methods, molecular sieve catalysts, metal/metal oxide/metal hydroxide catalysts, etc., can solve high investment and operating costs, lower gasoline octane number, cutting High temperature and other problems, to achieve the effect of small loss of octane number, high activity and high desulfurization rate
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Embodiment 1
[0090] 1. Preparation of carrier
[0091] According to γ-Al 2 o 3 : KNO3: water with a mass ratio of 6:0.3:9, the γ-Al 2 o 3 impregnated with equal volume of KNO3 solution, dried at 120°C for 4h after impregnation, and then roasted at 550°C for 4h to obtain the metal oxide treated with metal salt (i.e. γ-Al impregnated with KNO3 solution 2 o 3 ); grinding the above prepared metal oxide treated with metal salt to obtain a carrier.
[0092] 2. Atomic layer deposition
[0093] Nitrogen was used as the carrier gas and purge gas, and 10.3 parts by mass of CoSO were introduced into the reactor equipped with 100 parts by mass of the above carrier in a pulsed manner. 4 Steam and 21.3 mass parts (NH 4 ) 6 Mo 7 o 24 steam, followed by N 2 purge, steam purge and N 2 Purge, where the deposition temperature is controlled at 250°C and the gas flow rate is 250cm 3 / min, that is, complete one deposition; repeat the above operation 200 times, that is, complete 200 depositions.
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Embodiment 2
[0099] 1. Preparation of carrier
[0100] According to γ-Al 2 o 3 : KNO3: water with a mass ratio of 6:0.6:9, the γ-Al 2 o 3 impregnated with equal volume of KNO3 solution, dried at 120°C for 4h after impregnation, and then roasted at 550°C for 4h to obtain the metal oxide treated with metal salt (i.e. γ-Al impregnated with KNO3 solution 2 o 3 ); grinding the above prepared metal oxide treated with metal salt to obtain a carrier.
[0101] 2. Atomic layer deposition
[0102] With nitrogen as the carrier gas and purge gas, 10.3 parts by mass of CoSO were introduced into the reactor equipped with 100 parts by mass of the carrier prepared in Example 1 in a pulsed manner. 4 Steam and 21.3 mass parts (NH 4 ) 6 Mo 7 o 24 steam, followed by N 2 purge, steam purge and N 2 Purge, where the deposition temperature is controlled at 200°C and the gas flow rate is 250cm 3 / min; repeat the above operation 200 times.
[0103] 3. Preparation of selective hydrodesulfurization catal...
Embodiment 3
[0107] 1. Metal salt treatment of metal oxides
[0108] According to γ-Al 2 o 3 : KNO3: water with a mass ratio of 6:0.3:9, the γ-Al 2 o 3 impregnated with equal volume of KNO3 solution, dried at 120°C for 4h after impregnation, and then roasted at 550°C for 4h to obtain the metal oxide treated with metal salt (i.e. γ-Al impregnated with KNO3 solution 2 o 3 ).
[0109] 2. Alkali treatment of molecular sieves
[0110] 500mL of Na with a concentration of 4mol / L 2 CO 3 After the temperature of the solution water bath was raised to about 70°C, 25g of ZSM-5 molecular sieve was added to it, and after stirring for about 200 minutes, the mixture was immediately lowered to room temperature in an ice bath, filtered and washed with deionized water for several times until the filter cake was filtered. After the pH value of the effluent is about 7, the obtained filter cake is dried in an oven at 110° C. for 4 hours to obtain an alkali-treated ZSM-5 molecular sieve.
[0111] 3. Pre...
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