Mems infrared light source with suspended structure and preparation method thereof

A suspension structure and infrared light source technology, applied in the field of infrared light sources, can solve problems such as structural damage and complex process operations, and achieve the effects of increasing stability, improving radiation efficiency, and improving process compatibility

Active Publication Date: 2018-06-29
SOI MICRO CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This patent uses the final front dry etching to form the release cavity, which is easy to cause damage to the structure, and the process operation is relatively complicated

Method used

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  • Mems infrared light source with suspended structure and preparation method thereof
  • Mems infrared light source with suspended structure and preparation method thereof
  • Mems infrared light source with suspended structure and preparation method thereof

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Embodiment Construction

[0050] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0051] An embodiment of the present invention provides a MEMS infrared light source with a suspended structure, such as Figure 12 and Figure 13 As shown, the MEMS infrared light source of the suspension structure includes, from bottom to top, a silicon nitride mask layer 7, a carrier substrate 1, a silicon oxide support layer 2, a silicon nitride support layer 3, a polysilicon heating layer 4, an oxide Silicon isolation layer 5 , polysilicon radiation layer...

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Abstract

The invention discloses an MEMS infrared light source of a suspension structure and a preparation method of the MEM infrared light source. The MEMS infrared light source of the suspension structure comprises a thin film suspension structure and an infrared light source structure on the suspension structure, wherein the thin film suspension structure is a patterned supporting layer, and the supporting layer is an arc four-beam fixing and supporting structure deposited on a carrier substrate; the infrared light source structure comprises a heating layer, an isolation layer, a patterned metal electrode and a radiation layer; the heating layer is deposited on the supporting layer, and the patterned metal electrode is deposited on the supporting layer and connected with the side surface of the heating layer; the isolation layer is prepared on the heating layer; the radiation layer is prepared on the upper surface of the isolation layer; and the radiation layer, the isolation layer, the heating layer and the supporting layer are respectively suspended on the carrier substrate of a back cavity to form the thin film suspension structure. By adopting the MEMS infrared light source, heat transferring accesses can be greatly reduced, the thermal mass is reduced, and the performance of the infrared light source is improved.

Description

technical field [0001] The invention relates to the technical field of infrared light sources, in particular to a suspended structure MEMS infrared light source and a preparation method thereof. Background technique [0002] With the rapid development of the global economy, the global environment continues to deteriorate, and the air pollution problem caused by the emission of various toxic and harmful gases is becoming more and more serious, seriously affecting the survival and development of human beings. Entering the 21st century, with the maturity of information technology and people's concern about environmental issues, there is a huge market demand for gas sensors. [0003] Gas sensors based on non-dispersive infrared absorption spectroscopy (NDIR) overcome the shortcomings of traditional catalytic and electrochemical principles, such as gas sensors that are prone to poisoning, aging, and short life, and have high detection accuracy, large range, high reliability, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81C1/00
CPCB81B7/0009B81C1/00039
Inventor 明安杰刘卫兵任耀辉毛海央谭秋林王玮冰熊继军陈大鹏
Owner SOI MICRO CO LTD
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