Method for patterning three-dimensional graphene nanowall through laser etching

Abstract

The invention discloses a method for patterning a three-dimensional graphene nanowall through laser etching. The method comprises the following steps of 1, preparing the three-dimensional graphene nanowall on a substrate; 2, drawing a pattern which needs to be etched into a graphic file which can be read by a laser etching machine; 3, fixing the prepared three-dimensional graphene nanowall to a carrying platform of the laser etching machine; 4, typing the drawn graphic file in the laser etching machine, and performing patterning on the three-dimensional graphene nanowall in an etching manner through the laser etching machine; 5, peeling off the patterned three-dimensional graphene nanowall from the substrate; and 6, cutting the peeled-off three-dimensional graphene nanowall. The three-dimensional graphene nanowall is patterned by the laser etching method; and meanwhile, the technological process is simple, the cost is relatively low, and the rate of finished products is relatively high.

Description

technical field [0001] The invention relates to a method for patterning transformation of a three-dimensional graphene nano-wall by using laser etching technology. Background technique [0002] As a two-dimensional monoatomic layer atomic crystal, graphene has high electrical conductivity, large specific surface area, good mechanical properties and electrochemical properties. The carbon material with nanowall structure has graphite sheets grown perpendicular to the substrate, highly open boundary structure and abundant edge sites. This three-dimensional structure of graphene nanowall makes graphene have higher specific surface area and high mechanical strength. , faster electron transfer rate, etc., have broad application prospects in the field of electrochemistry and sensors. [0003] Microelectronic devices based on graphene and three-dimensional graphene require precise positioning and patterning. The main technologies currently used are: 1. Pattern the catalyst first, g...

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Problems solved by technology

2. Transfer graphene and graphene nanowalls to the device substrate first, and then etch the required pattern through photolithography and etching. This method requires oxygen plasma to cause damage to the graphene nanowalls. In addition, during the transfer process, the organic solvent will cause relatively large damage to the graphene nanowall, and it is difficult to recycle the waste liquid at the end, making it difficult to prepare high-quality products.

3. Using the template imprinting method, this method needs to make different templates, the manufacturing process is complicated and the cost is high

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