Device and method for refreshing DRAM (dynamic random access memory) or eDRAM(enhanced dynamic random access memory)
A control device and refresh cycle technology, applied in information storage, static memory, digital memory information and other directions, can solve the problems of reducing the amount of DRAM read and write, increase of read and write delay time, etc., to achieve the coordination and reduction of refresh and read and write work. The effect of delay in reading and writing and increasing work efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0030] The present invention will be further described in detail below in conjunction with the accompanying drawings, so that those skilled in the art can implement it with reference to the description.
[0031] Such as figure 1 Shown is the schematic diagram of the work of the existing centralized refresh device, its refresh cycle (data retention time) includes two parts: read, write and refresh, and it cannot perform read and write operations during refresh, so that the work of DRAM or eDRAM Efficiency becomes lower.
[0032] Such as figure 2 Shown is a working schematic diagram of the DRAM or eDRAM refresh device of the present invention, the DRAM or eDRAM refresh device sets the refresh cycle to be shorter than the data retention time, and the data retention time is 1-3 seconds. In each refresh cycle, the time domain is divided into three parts. The first part is called the centralized refresh time. The first part is for centralized refresh, but when there is a read and...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com