Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus

A photodiode and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, diodes, etc., can solve problems such as quantum efficiency degradation, increase in the amount of light, degradation, etc., achieve good initial characteristics, reduce the number of layers, and reduce stress. Effect

Active Publication Date: 2020-08-21
TIANMA MICRO ELECTRONICS CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] 1. In order to obtain good oxide semiconductor characteristics, high-temperature annealing is required, and in thick photodiode layers, high-temperature annealing causes peeling
[0014] 2. Since the photodiode layer is arranged in the lower layer, the number of stacked films of the upper layer increases, and the amount of light reaching the photodiode increases, causing degradation in quantum efficiency
[0021] 2-1. Degradation of turn-off characteristics due to hydrogen generated at the time of forming the photodiode film
[0022] 2-2. In the case where the photodiode is arranged in the lower layer, other problems occur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus
  • Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus
  • Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054]

[0055] image 3 is a cross-sectional view of the element structure of the semiconductor device according to Embodiment 1 of the present invention. Figure 4 is a plan view schematically illustrating a circuit of a photodiode array. will describe image 3 The component structure shown in. In the upper layer of the oxide semiconductor layer 4, the source electrode 5 and the drain electrode 6 of the TFT are formed to be separated by the channel length, and just below the oxide semiconductor layer 4, there is a gate electrode 2, a gate insulating film 3 is placed between the oxide semiconductor layer 4 and the gate electrode 2. Below the gate electrode 2 , there is a substrate 1 , and the substrate 1 is arranged in the lowermost layer. The TFT is directly in contact with and covered by the first protective film 7 . The photodiode has a structure in which a lower electrode 8 , a hydrogenated amorphous silicon layer 9 , and an upper electrode 10 are successively stac...

Embodiment 2

[0083]

[0084] Figure 7 is a cross-sectional view of an element structure of a semiconductor device according to Embodiment 2 of the present invention. As a significant difference from Example 1, although in image 3 In the case shown in , a trench digging type structure in which the source electrode 5 and the drain electrode 6 are directly formed just above the oxide semiconductor layer 4 is employed, but Figure 7 The structure shown in is a channel protection type structure in which an etching stopper layer 23 is formed in an upper layer of the oxide semiconductor layer 4 . The source electrode 5 and the drain electrode 6 are separated from each other, and are formed to be partially covered with the oxide semiconductor layer 4 and the etching stopper layer 23 , respectively. The depth of the opening portion 19 is such that the etching stopper layer 23, the source electrode 5, and the drain electrode 6 need not be exposed and the etching stopper layer 23 or the source ...

Embodiment 3

[0097]

[0098] Figure 8 is a cross-sectional view of an element structure of a semiconductor device according to Embodiment 3 of the present invention. As a significant difference from Embodiment 1, the source electrode 5 and the drain electrode 6 are formed as a film after the opening portion 19 is formed. In addition, the first contact hole 16 connecting the lower electrode 8 and the source electrode 5 is formed not in the first protective film 7 but in the second protective film 11 and the third protective film 14 . Therefore, source electrode 5 is connected to the upper surface of lower electrode 8 . In addition, since the third contact hole 18 is formed in the third protection film 14 , the drain electrode 6 is connected to the upper surface of the signal line 13 . The opening portion 19 arranged on the immediately upper side of the oxide semiconductor includes a channel region and is opened in a range which is the contact area between the channel region and the sou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a semiconductor device, a method of manufacturing the semiconductor device, a photodiode array, and an imaging apparatus. The semiconductor device includes: a thin film transistor including an oxide semiconductor layer that is formed in an island shape and contains at least one or more elements among indium, gallium, zinc, and tin and oxygen, a source and a drain that are connected to the oxide semiconductor layer; a protective film of at least one or more layers that is formed in an upper layer of the oxide semiconductor layer, and an opening portion that is disposed in the protective film and has a position and a size for including a channel region or a back channel region of the oxide semiconductor layer; and a photodiode that is disposed in an upper layer upper than the oxide semiconductor layer of the thin film transistor and includes a hydrogenated amorphous silicon layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Patent Application No. 2015-092286 filed in Japan on April 28, 2015 and Patent Application No. 2015-244543 filed in Japan on December 15, 2015, the entire contents of which Incorporated in this application by reference. technical field [0003] The present invention relates to a semiconductor device using an oxide semiconductor, and more particularly, to a photodiode array and an imaging device. Background technique [0004] The photodiode array is a device in which semiconductor devices each formed by connecting thin film transistors (hereinafter referred to as TFTs) and photodiodes are aligned in a matrix pattern. Oxide semiconductors are used as replacement materials for amorphous silicon semiconductors used for TFTs included in photodiode arrays. [0005] In other words, the photodiode array is a type of image sensor, and its elements are formed of photodiodes formed using hydr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L29/10H01L29/786H01L21/34H01L31/0376H01L31/105H01L31/20
CPCH01L27/14616H01L27/14643H01L27/14689H01L29/1033H01L29/66969H01L29/7869H01L31/03762H01L31/1055H01L31/202Y02E10/50
Inventor 奈良修平
Owner TIANMA MICRO ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com