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A Defect Analysis Method for Transparent Materials

A technology for transparent material and defect analysis, which is used in material analysis using radiation, semiconductor/solid-state device testing/measurement, electrical components, etc. control, difficulty in obtaining physical maps, etc., to achieve ideal effects, high accuracy, and easy analysis.

Active Publication Date: 2018-11-27
EPIWORLD INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some wafers, such as SiC wafers, are a kind of transparent material with a mirror surface, which has shortcomings such as reflection and poor anti-light interference. If conventional methods, such as camera photography, are used, it is difficult to obtain ideal physical images.
In addition, the physical map and the result map cannot be compared and analyzed intuitively, which greatly affects the defect analysis and quality control of the chip.

Method used

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  • A Defect Analysis Method for Transparent Materials

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Embodiment Construction

[0022] The defect analysis method of a transparent material of this embodiment firstly provides a transparent material to be analyzed, performs microscopic defect detection on the transparent material to obtain a defect distribution map, and then attaches the transparent material to the defect distribution map through alignment. , Use the scanner to scan the image to obtain the object-result comparison chart, and analyze the correlation between the defect and the appearance of the transparent material through the object-result comparison chart.

[0023] The detection of micro-defects of transparent materials is to scan the surface of transparent materials by laser, and obtain the specific distribution of various micro-defects by detecting the scattering intensity, shape change, surface reflectivity and phase shift, etc., and obtain the actual size and shape of the transparent material. Matched defect distribution map. The defect distribution map is preferably a coordinate map, wh...

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Abstract

The invention discloses a transparent material defect analysis method comprising the steps of carrying out micro defect detection on a transparent material to get a defect distribution map matching a transparent material object, attaching the transparent material onto the defect distribution map through aligned overlapping, performing image scanning using a scanner to get an object-result contrast map, and analyzing the correlation between defects and the appearance of the transparent material based on the object-result contrast map. According to the method, a real image of the transparent material and intuitive contrast between the real image and the defect distribution map are acquired through the image replication function of the scanner, and then, the correlation between micro defects and problems like transparent material breakage is found out. The method is highly resistant to light interference, simple to operate and highly reliable, and has practical application value.

Description

Technical field [0001] The invention relates to material analysis technology, in particular to a defect analysis method of transparent materials. Background technique [0002] Semiconductor wafers are raw materials used to make integrated circuit devices. Their structure and performance directly affect the stability and reliability of finished devices. Therefore, the quality inspection and analysis of semiconductor wafers is of great significance. You can use quality inspection and analysis to find out The problem then improves the production process. Semiconductor wafer materials have more or less small defects. The diameter of large defects can reach 1~2mm, and the diameter of small defects is about 30μm or even smaller. It cannot be accurately distinguished under the current ordinary optical conditions, and professional defect detection is required. The instrument detects the defects one by one and displays them through the result graph. The result graph is not intuitive, it...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/02G01N23/02
CPCG01N23/02H01L21/02H01L22/12
Inventor 吕立平
Owner EPIWORLD INT
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