A method of growing high-quality silicon carbide whiskers

A silicon carbide whisker, high-quality technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of complex growth process and unstable whisker, and achieve strong operability and low production cost , cost reduction effect

Active Publication Date: 2018-06-26
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The growth process is complex and the synthesized whiskers are unstable

Method used

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  • A method of growing high-quality silicon carbide whiskers

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] First put the graphite crucible with polysilicon raw material into the vacuum furnace, then evacuate the vacuum furnace chamber to 0Pa, then fill the furnace with argon gas to 0.5 atm, then heat the graphite crucible, and slowly raise the temperature to 1420°C until the polysilicon melts. Continue to raise the temperature to 1500°C and keep it warm for 30 minutes to make the molten silicon corrode the graphite crucible, thereby obtaining a silicon carbide solution. Then immerse the silicon carbide whisker collection rod and collection plate into the silicon carbide solution in the graphite crucible, keeping the collection plate 3cm away from the liquid surface for 3 hours to obtain 3C-SiC whiskers with a diameter of 500μm and a length of 2cm.

Embodiment 2

[0024] First, put the graphite crucible with polysilicon raw material into the vacuum furnace, then evacuate the vacuum furnace chamber to 0Pa, then fill the furnace with argon gas to 1 atm, then heat the graphite crucible, and slowly raise the temperature to 1420 °C until the polysilicon melts. Continue to raise the temperature to 1500°C and keep it warm for 30 minutes to make the molten silicon corrode the graphite crucible, thereby obtaining a silicon carbide solution. Then immerse the silicon carbide whisker collection rod and collection plate into the silicon carbide solution in the graphite crucible, keep the collection plate 3 cm away from the liquid surface, and keep it for 6 hours to obtain 3C-SiC whiskers with a diameter of 500 μm and a length of 4 cm.

Embodiment 3

[0026] First put the graphite crucible with polysilicon raw material into the vacuum furnace, then evacuate the vacuum furnace chamber to 0Pa, then fill the furnace with helium to 0.7atm, then heat the graphite crucible, and slowly raise the temperature to 1420°C until the polysilicon melts. Continue to raise the temperature to 1700°C and keep it warm for 30 minutes to make the molten silicon corrode the graphite crucible to obtain a silicon carbide solution. Then immerse the silicon carbide whisker collection rod and collection plate into the silicon carbide solution in the graphite crucible, keep the collection plate 1 cm away from the liquid surface, and keep it for 3 hours to obtain 4H-SiC whiskers with a diameter of 600 μm and a length of 3 cm.

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Abstract

The invention belongs to the technical field of a silicon carbide solution process, and particularly relates to a method for growing high-quality silicon carbide whiskers. The method is implemented by using a growth device; and a whisker collecting bar and a collecting board are impregnated into a silicon carbide solution in a graphite crucible, and the synthesis position and synthesis temperature can be regulated to implement controlled growth of whiskers. The method for producing high-quality SiC whiskers has the advantages of simple production process, high operability and low production cost, and can implement mass growth of controllable-size high-quality silicon carbide whiskers.

Description

technical field [0001] The invention belongs to the technical field of silicon carbide solution method, in particular to a method for growing high-quality silicon carbide whiskers. Background technique [0002] Silicon carbide (SiC) is a typical representative of the third-generation half-width bandgap semiconductor materials. Compared with the traditional material silicon (Si), it has better performance in terms of bandgap width, thermal conductivity, critical breakdown field strength, and saturation electron drift rate. has obvious advantages. Silicon carbide whiskers have the advantages of high melting point, high strength, low thermal expansion rate, and corrosion resistance. They can be used as reinforcing and toughening agents for composite materials such as ceramic matrix and metal matrix, and can be used as materials for ceramic mechanisms, advanced refractory materials, and refractory coatings. , Widely used in machinery, electronics and aviation and other fields. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B29/62C30B9/00
CPCC30B9/00C30B29/36
Inventor 朱灿李斌宋生张亮
Owner SICC CO LTD
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