Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device for producing continuous tunable defect mode plasma photonic crystals and method thereof

A plasma and photonic crystal technology, applied in the field of ions, can solve the problems of limited application range of plasma photonic crystals, inability to continuously adjust, and achieve the effects of simple structure, convenient operation and wide space

Active Publication Date: 2016-10-12
SUZHOU UNIV
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing defect modes cannot be continuously adjusted, which limits the application range of plasmonic photonic crystals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for producing continuous tunable defect mode plasma photonic crystals and method thereof
  • Device for producing continuous tunable defect mode plasma photonic crystals and method thereof
  • Device for producing continuous tunable defect mode plasma photonic crystals and method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention will now be further described in detail in conjunction with the accompanying drawings and embodiments. These drawings are all simplified schematic diagrams, only illustrating the basic structure of the present invention in a schematic manner, so it only shows the composition related to the present invention.

[0023] Such as figure 1 As shown, a device for generating plasmonic photonic crystals with continuously tunable defect modes includes a discharge power source 1, a frame, an array of alumina ceramic rods mounted on the frame and a plasma discharge tube 2, and the frame includes two parallel arrangements up and down. A first plexiglass plate 4 and a plurality of support pipes 6 connecting two first plexiglass plates 4 are drilled on the two first plexiglass plates 4 according to the arrangement position of the alumina ceramic rod array and the plasma discharge tube 2 Corresponding through holes (not shown in the figure), the alumina ceramic ro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a device for producing continuous tunable defect mode plasma photonic crystals. The device comprises a discharge power supply, a framework, an alumina ceramic rod array and plasma discharge tubes which are installed on the framework. The formwork comprises two first organic glass plates which are vertically arranged in parallel and multiple supporting tubes which are connected with the two first organic glass plates. The alumina ceramic rod array and the plasma discharge tubes penetrate through the two first organic glass plates. The plasma discharge tubes are arranged among the alumina ceramic rod array. The plasma discharge tubes are connected with the discharge power supply. The invention also relates to a method for producing the continuous tunable defect mode plasma photonic crystals. The device for producing the continuous tunable defect mode plasma photonic crystals has the advantages of simple structure, convenient operation and continuous and tunable defect modes so that a wider space for the research of the plasma photonic crystals is provided and the device is expected to play an important role in industrial application.

Description

technical field [0001] The invention relates to the field of plasma technology, in particular to a device and method for generating plasma photonic crystals with continuously tunable defect modes. Background technique [0002] Plasma photonic crystals are a new type of tunable photonic crystals formed by the periodic distribution of the plasma's own density or the interlaced periodic arrangement with other dielectric materials. It not only has the properties of general photonic crystals, but also embodies the characteristics of plasma, and its band gap can be effectively controlled by changing the plasma parameters or applying an external magnetic field. If appropriate defects are constructed in plasmonic photonic crystals with tunable bandgap, devices such as tunable filters and waveguides can be formed, which has important applications in engineering. In particular, by conveniently adjusting space or time parameters such as electron density, lattice constant, and symmetry...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/24
CPCH05H1/24
Inventor 杨东瑾金成刚谭海云吴雪梅诸葛兰剑王钦华
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com