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Magnetic tunnel junction and magnetic memory

A technology of magnetic tunnel junction and ferromagnetic layer, which is applied in the field of magnetic tunnel junction and magnetic memory, and can solve the problem of slow switching speed of the magnetization direction of the storage layer

Active Publication Date: 2016-10-12
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The magnetic memory changes the magnetization direction of the storage layer through the spin-transfer torque (English: Spin-Transfer Torque, referred to as STT). When the current passes through the MTJ, the STT and the magnetization direction of the storage layer are collinear, and disturbance is required to realize the flip, resulting in the Magnetization direction reversal is slow

Method used

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  • Magnetic tunnel junction and magnetic memory

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Embodiment Construction

[0049] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0050] see figure 1 , figure 1 is a structural schematic diagram of a traditional MTJ disclosed in the prior art. figure 1 The shown MTJ includes a first ferromagnetic layer 101, a potential barrier layer 102 and a second ferromagnetic layer 103, wherein the magnetization direction of the first ferromagnetic layer 101 is fixed and is a reference layer, and the magnetization direction of the second ferromagnetic layer 103 is The magnetization di...

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Abstract

Embodiments of the invention disclose a magnetic tunnel junction (MTJ) and a magnetic memory. The MTJ comprises a first ferromagnetic layer, a barrier layer, a second ferromagnetic layer, a buffer layer, a third ferromagnetic layer and a heavy metal layer from upper to lower in sequence, wherein the first ferromagnetic layer, the second ferromagnetic layer and the third ferromagnetic layer all comprise mixed metal materials; the barrier layer comprises a metal oxide material; the buffer layer comprises a non-ferromagnetic material; the magnetizing direction of the first ferromagnetic layer is a fixed direction; and the second ferromagnetic layer and the third ferromagnetic layer form ferromagnetic coupling or anti-ferromagnetic coupling. By adoption of the embodiments of the invention, the turnover speed of the third ferromagnetic layer in the magnetic tunnel junction in the magnetizing direction can be accelerated, the reliability of the MTJ can be improved, the write current can be reduced, and the power consumption can be lowered consequently.

Description

technical field [0001] The invention relates to the technical field of communication, in particular to a magnetic tunnel junction and a magnetic memory. Background technique [0002] Magnetic memory is a memory that stores data information through magnetoresistive properties. Due to the advantages of stable non-volatility and unlimited read times, magnetic memory has been extensively studied at present. The core storage part of the magnetic memory is the magnetic tunnel junction (English: Magnetic Tunnel Junction, MTJ for short), such as figure 1 As shown, the MTJ includes a first ferromagnetic layer and a second ferromagnetic layer, the magnetization direction of the first ferromagnetic layer is fixed, which is the reference layer, and the magnetization direction of the second ferromagnetic layer can be parallel or antiparallel to the reference layer, for the storage layer. When the magnetization directions of the storage layer and the reference layer are parallel, the MT...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H10N50/10
CPCH10N50/10
Inventor 张博宇赵巍胜廖宇
Owner HUAWEI TECH CO LTD
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