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Preparation method of semiconductor-carried manganese cobalt composite oxide nanometer material

A technology of composite oxides and nanomaterials, which is applied in the field of preparation of nanofunctional materials, can solve the problems of high production cost and long reaction time, and achieve high activity, simple preparation process, and environmentally friendly effects

Inactive Publication Date: 2016-09-21
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Manganese-cobalt composite oxide nanomaterials have attracted widespread attention due to their unique structural characteristics, outstanding physical and chemical properties, and their superior optical, magnetic, electrochemical, and catalytic properties, but this is far from enough to meet people's actual needs , researchers combined manganese-cobalt composite oxides with semiconductors (such as TiO 2 , CeO 2 ) and so on to further improve its performance and expand its application prospects
[0003] Generally, methods for depositing manganese-cobalt composite oxides on semiconductors include hydrothermal method, impregnation method and sol-gel method, etc. However, the above synthesis methods usually require high temperature or strong acid and strong alkali environment, and the reaction time is long and the production cost is high. Therefore It is particularly important to find a simple and fast synthetic method

Method used

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  • Preparation method of semiconductor-carried manganese cobalt composite oxide nanometer material
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  • Preparation method of semiconductor-carried manganese cobalt composite oxide nanometer material

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Embodiment 1

[0023] see figure 1 , a method for preparing a semiconductor-loaded manganese-cobalt composite oxide nanomaterial of the present invention, comprising the following steps:

[0024] (1). 0.1 g titanium dioxide nanorods (TiO 2 ), add 160 mL deionized water and mix well to get TiO 2 Suspended solution; add 0.0395 g of potassium permanganate to 40 mL of deionized water, and mix well to obtain potassium permanganate solution;

[0025] (2). TiO obtained in the above step (1) 2 Mix the suspension solution and potassium permanganate solution, mix evenly, irradiate the above mixed solution with a 300 W xenon lamp for 2 h, add 5 mL of 0.21825 g cobalt nitrate hexahydrate after the reaction, and then irradiate for 2 h. After the reaction, filter and wash with suction to obtain the sample;

[0026] (3). The sample obtained in the above step (2) was dried, ground, and calcined at 350°C for 2 h to prepare titanium dioxide nanorod-supported manganese-cobalt composite oxide nanomaterials....

Embodiment 2

[0029] see Figure 5 The difference between the specific steps of the present embodiment 2 and the specific steps of the embodiment 1 is only: the titanium dioxide nanorods (TiO2) described in the step (1) of the present embodiment 2 ) for titanium dioxide nanosheets (TiO 2 ), the other steps of the present embodiment 2 are the same as each step in the embodiment 1, and the structure diagram of the transmission electron microscope (TEM) of the titanium dioxide nanosheets loaded with manganese-cobalt composite oxide is as follows Figure 5 shown.

Embodiment 3

[0031] The specific steps of the present embodiment 3 are different from the specific steps of the embodiment 1 only: in the step (2) of the present embodiment, the solution after the above-mentioned mixing is irradiated with a 300 W xenon lamp, and the light reaction time is 1 h, add 5 mL of 0.21825 g of cobalt nitrate hexahydrate, and then illuminate for 1 h. The other steps in this example are the same as those in Example 1. Catalytic performance evaluation chart, such as Figure 6 shown.

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Abstract

The invention discloses a preparation method of a semiconductor-carried manganese cobalt composite oxide nanometer material. The method includes the steps that 1, 0.05-50 g of semiconductor carriers are dispersed in 160 mL of deionized water, a semiconductor suspension solution is obtained, 0.01-1 g of potassium permanganate is added to 50mL-5L of deionized water, a potassium permanganate solution is obtained, and the concentration of the potassium permanganate solution is 0.002-20 g / l; 2, the semiconductor suspension solution and the potassium permanganate solution are mixed and irradiated by a 300 W xenon light source, irradiation time is 10-24 hours, by mass, 0.01-50 g of Co salt is added to the solution, then irradiation is conducted for 2 hours, and suction filtration and washing are conducted; 3, an obtained sample is dried, ground and then calcined for 0.5-12 hours at the temperature of 200-1000 DEG C after being ground, and the semiconductor-carried manganese cobalt composite oxide nanometer material is prepared. The preparation method has the advantages of being simple in process, easy and convenient to operate, low in production cost and environmentally friendly.

Description

technical field [0001] The invention relates to the field of preparation of nano functional materials, in particular to a preparation method of semiconductor-loaded manganese-cobalt composite oxide nanomaterials. Background technique [0002] Manganese-cobalt composite oxide nanomaterials have attracted widespread attention due to their unique structural characteristics, outstanding physical and chemical properties, and their superior optical, magnetic, electrochemical, and catalytic properties, but this is far from enough to meet people's actual needs , researchers combined manganese-cobalt composite oxides with semiconductors (such as TiO 2 , CeO 2 ) and so on to further improve its performance and expand its application prospects. [0003] Generally, methods for depositing manganese-cobalt composite oxides on semiconductors include hydrothermal method, impregnation method and sol-gel method, etc. However, the above synthesis methods usually require high temperature or s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G51/00B82Y30/00
CPCC01G51/00B82Y30/00C01P2004/04
Inventor 黄垒施利毅胡晓楠张登松张剑平李红蕊
Owner SHANGHAI UNIV
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