Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for detecting GaN-based HEMT degradation through current fitting

A current and tunneling current technology, which is applied in the field of GaN-based HEMT degradation detection through current fitting, can solve the problems of complex testing, inaccurate test results, and inability to directly test manufactured devices, so as to achieve low requirements and improve work efficiency. reliability effect

Active Publication Date: 2016-08-24
JIANGNAN UNIV
View PDF8 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method can only obtain the barrier layer dislocation density of epitaxial wafers that have not been fabricated into devices or devices that have been etched, and cannot directly test the manufactured devices, and the test is relatively complicated, and the test results are not accurate and cannot Determining the effects of stress on devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for detecting GaN-based HEMT degradation through current fitting
  • Method for detecting GaN-based HEMT degradation through current fitting
  • Method for detecting GaN-based HEMT degradation through current fitting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0024] The method for detecting GaN-based HEMT degradation by current fitting provided by the present invention specifically includes the following steps:

[0025] Step 1: Fabricate a circular Schottky diode structure on a GaN-based heterojunction epitaxial wafer, such as figure 1 shown;

[0026] First, a circular Schottky contact is made on the epitaxial material, and a circular gate electrode is made on the device according to the conventional GaN device process. The circle has a diameter size of 100 μm and is 20 μm away from the ohmic contact.

[0027] Step 2: Stres...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for detecting GaN-based HEMT degradation through current fitting. The method comprises the steps: firstly making a circular Schottky diode structure facilitating the analysis of gate leakage current characteristics, applying a continuous reverse stress to the circular Schottky diode structure, and measuring the curves of temperature dependent on current-voltage before and after stress; secondly employing extrapolation to determine the saturation tunneling current value and tunneling parameter value of a device under the absolute zero temperature before and after stress through the fitting of forwarding tunneling currents under different temperatures according to the relation between the saturation tunneling current and tunneling parameter and the temperature; finally calculating the change, caused by stress, of the defect density of a barrier layer, and achieving the detection of the GaN-based HEMT degradation. The simple method is employed for achieving the detection of the change, caused by the stress, of the defect density of the barrier layer, and facilitates the analysis of the degradation mechanism and process of a GaN-based HEMT device.

Description

technical field [0001] The invention relates to the technical field of GaN-based HEMT reliability analysis, in particular to a method for detecting GaN-based HEMT degradation through current fitting. Background technique [0002] Compared with traditional narrow-bandgap semiconductors, wide-bandgap GaN semiconductors have superior physical properties such as high breakdown electric field, high electron saturation velocity, and high thermal stability. Especially the AlGaN / GaN or InAlN / GaN heterojunction with strong polarization effect can induce a high concentration of two-dimensional electron gas at the heterointerface, which is the core structure of HEMT. However, when the GaN-based HEMT works in the high reverse gate bias mode, the leakage current of the device will continue to increase with the voltage application time. The increased leakage current will increase the power loss of the device, so this degradation seriously hinders its large-scale commercial application. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R31/28G01R19/00
CPCG01R19/00G01R31/2601G01R31/2621G01R31/2632G01R31/2642G01R31/2831
Inventor 任舰顾晓峰闫大为
Owner JIANGNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products