Method for detecting GaN-based HEMT degradation through current fitting
A current and tunneling current technology, which is applied in the field of GaN-based HEMT degradation detection through current fitting, can solve the problems of complex testing, inaccurate test results, and inability to directly test manufactured devices, so as to achieve low requirements and improve work efficiency. reliability effect
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[0022] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0024] The method for detecting GaN-based HEMT degradation by current fitting provided by the present invention specifically includes the following steps:
[0025] Step 1: Fabricate a circular Schottky diode structure on a GaN-based heterojunction epitaxial wafer, such as figure 1 shown;
[0026] First, a circular Schottky contact is made on the epitaxial material, and a circular gate electrode is made on the device according to the conventional GaN device process. The circle has a diameter size of 100 μm and is 20 μm away from the ohmic contact.
[0027] Step 2: Stres...
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