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Preparation method of large-size high-pure copper flat target material

A high-purity copper and planar target technology, applied in the field of sputtering targets, can solve the problems of easy deformation of large-sized copper targets and large investment in equipment, and achieve the effects of avoiding abnormal tissue growth, low equipment cost, and increasing compactness

Inactive Publication Date: 2016-08-24
LUOYANG SIFON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This patented method needs to use a 500-1200 ton calender to hot-roll into a copper target. The equipment investment is large, and the length of the copper target is not given, and the large-sized copper target is easily deformed after being rolled.

Method used

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  • Preparation method of large-size high-pure copper flat target material
  • Preparation method of large-size high-pure copper flat target material
  • Preparation method of large-size high-pure copper flat target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A method for preparing a large-scale high-purity copper planar target, comprising the following steps:

[0039] (1) Heat the cylindrical copper ingot (specification φ200 mm×300 mm, purity 99.99%, hardness HV40) to 600°C for 50 minutes, preheat the air hammer head to 350°C, and firstly Pull out after upsetting, the final size is φ150 mm×400 mm;

[0040] (2) Continue to heat the copper ingot processed in step (1) for 30 minutes, forging three times, each forging 10 times, three forging directions (X, Y, Z directions) are perpendicular to each other, forging until Cuboid copper forging blank, the size of cuboid copper forging blank is 72mm×200mm×840mm;

[0041] (3) Continuously heat the cuboid copper forging billet in step (2) at 300°C for 60 minutes, and cool it to room temperature in the air to realize the first annealing treatment of the copper forging billet;

[0042] (4) Hot-roll the cuboid copper forging billet after the annealing treatment in step (3) on a 300-ton...

Embodiment 2

[0045] A method for preparing a large-scale high-purity copper planar target, comprising the following steps:

[0046] (1) Heat the cylindrical copper ingot (specification φ180 mm×360 mm, purity 99.999%, hardness HV40) to 650°C for 45 minutes, preheat the air hammer head to 300°C, and pull out the copper billet first Upsetting after lengthening, the final size is φ150 mm×450 mm;

[0047] (2) Continue to heat the copper ingot processed in step (1) for 35 minutes, and forge three times, each time forging 12 times, and the three forging directions (X, Y, Z directions) are perpendicular to each other, forging to a cuboid Copper forging billet, the size of cuboid copper forging billet is 80mm×210mm×830mm;

[0048] (3) Continuously heat the cuboid copper forging billet in step (2) at 350°C for 55 minutes, and cool it to room temperature in the air to realize the first annealing treatment of the copper forging billet;

[0049] (4) Hot-roll the cuboid copper forging billet after the...

Embodiment 3

[0052] A method for preparing a large-scale high-purity copper planar target, comprising the following steps:

[0053] (1) Heat the cylindrical copper ingot blank (specification φ200 mm×400 mm, purity 99.99%, HV40) to 700°C for 40 minutes, preheat the hammer head of the air hammer to 350°C, and pull out the copper billet first After upsetting, the final size is φ130 mm×480 mm;

[0054] (2) Continue to heat the copper ingot processed in step (1) for 40 minutes, and forge three times, each forging 13 times, three forging directions (X, Y, Z directions) are perpendicular to each other, forging to a cuboid Copper forging billet, the size of cuboid copper forging billet is 70mm×220mm×820mm;

[0055] (3) Continuously heat the cuboid copper forging billet in step (2) at 380°C for 50 minutes, and cool it to room temperature in the air to realize the first annealing treatment of the copper forging billet;

[0056] (4) Remove the oxide layer on the surface of the cuboid copper forging...

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Abstract

The invention belongs to the technical field of sputtering target materials and particularly relates to a preparation method of a large-size high-pure copper flat target material. The preparation method includes the steps that upsetting and drawing out are performed on a copper blank, the copper blank is forged into a cuboid copper forged blank, and annealing treatment is performed for the first time; and then hot rolling is performed, annealing treatment is performed for the second time, and the copper target material is obtained. The prepared copper target material is large in size, an internal structure is uniform and free of defects, the grain size is smaller than 100 microns, performance is excellent, and the copper target material can be widely applied to the field of flat panel displays.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, and in particular relates to a method for preparing a large-scale high-purity copper plane target. Background technique [0002] The high-quality and large-scale flat-panel displays require sputtered films to have high uniformity and low resistivity. Looking for higher conductivity and better anti-electromigration characteristics has become the direction of future development. At present, aluminum targets and their alloys have been widely used as wiring materials for sputtering targets in panel manufacturing in the field of flat-panel displays. With the improvement of people's living standards and economic development, the requirements for flat-panel displays are getting higher and higher. The main performance In terms of size and quality of flat panel displays. Compared with traditional aluminum materials, copper materials have higher electrical conductivity and better anti-electromi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22F1/08
CPCC23C14/3414C22F1/08
Inventor 高建杰崔冬乐孔雪孙虎民
Owner LUOYANG SIFON ELECTRONICS
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