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Wafer processing method

A processing method and wafer technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as damage and attack

Inactive Publication Date: 2016-07-20
DISCO CORP
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Problems solved by technology

[0013] However, studies have found that a new problem has arisen: when the focused point of the pulsed laser beam is positioned inside the wafer along the planned division line in a manner adjacent to the previously formed modified layer to irradiate, while inside the wafer When forming the modified layer, the laser beam is scattered on the surface opposite to the surface irradiated with the pulsed laser beam, that is, the front surface of the wafer, and damages the devices formed on the front surface

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Embodiment Construction

[0031] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. when referring to figure 1 , a schematic perspective view of a laser processing apparatus 2 suitable for implementing the wafer processing method of the present invention is shown.

[0032] The laser processing device 2 includes a first slider 6 mounted on a stationary base 4 so as to be movable in the X-axis direction. The first slider 6 moves along a pair of guide rails 14 in the machining feed direction, that is, the X-axis direction, via a machining feed mechanism 12 composed of a ball screw 8 and a pulse motor 10 .

[0033] The second slider 16 is mounted on the first slider 6 so as to be movable in the Y-axis direction. That is, the second slider 16 moves along the pair of guide rails 24 in the index feeding direction, that is, the Y-axis direction, via the index feeding mechanism 22 constituted by the ball screw 18 and the pulse motor 20 .

[0034] On ...

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Abstract

Provided is a wafer processing method, which restrains transmitting beams from damaging the front surface of a wafer. The method comprises the steps of: a wave length setting step: setting the wave length of permeable pulsed laser beams of a wafer in a range of 1300nm-1400nm; a step of forming a reformed layer: positioning the focus of the pulsed laser beams in the wafer so as to irradiate the pulsed laser beams corresponding to the segmentation predetermined lines on the back of the wafer, performing processing and feeding on a retention mechanism and a laser beam irradiation mechanism in an opposite way, and forming the reformed layer in the wafer; and a segmentation step: applying external force to the wafer so as to divide the wafer along the segmentation predetermined lines by using the reformed layer as a segmentation point. The step of forming a reformed layer comprises the steps of: irradiating a first pulsed laser beam having less energy of each pulse to form a first reformed layer; and irradiating a second pulsed laser beam having greater energy of each pulse to overlap with the first reformed layer to form a second reformed layer.

Description

technical field [0001] The present invention relates to a method for processing a wafer. After forming a modified layer inside the wafer by irradiating a pulsed laser beam of a wavelength that is transparent to the wafer, an external force is applied to the wafer to divide the wafer into multiple parts starting from the modified layer. device chip. Background technique [0002] Multiple devices such as IC and LSI are formed on the front side of a silicon wafer (hereinafter, sometimes simply referred to as a wafer) by dividing predetermined lines, and the silicon wafer is divided into individual device chips by a processing device, and the divided device chips are widely used. Used in various electronic devices such as mobile phones and personal computers. [0003] Regarding the division of wafers, widely used is a dicing method using a cutting device called a dicing saw. In the dicing method, a cutting tool made of metal or resin with abrasive grains such as diamond solidi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/78H01L21/268
CPCH01L21/268H01L21/78
Inventor 植木笃
Owner DISCO CORP
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