Low-power and high-linearity CMOS temperature sensor

Abstract

The invention discloses a low-power and high-linearity CMOS temperature sensor which at least includes: a starting circuit, a temperature-related current generating circuit, and a temperature sensing circuit. The starting circuit includes three P type MOS transistors each having current consumption at pA level when a system is working normally, and serves to prevent a circuit from being locked at a cut-off state ; the temperature-related current generating circuit is connected to the starting circuit and uses subthreshold value characteristics of MOS transistors to generate a current which has low power and is temperature-related. The temperature sensing circuit, through a current mirror, provides the current generated by the temperature-related current generating circuit for a base of the PNP transistor and the collector of which are in shorted connection, and generates a voltage which is linearly related to temperature at an emitter electrode of the PNP transistor. According to the invention, the temperature sensor herein is an integrated low-power and high-linearity temperature sensor which is based on CMOS technology.

Description

technical field [0001] The invention relates to a temperature sensor circuit, in particular to a CMOS temperature sensor with low power consumption and high linearity. Background technique [0002] Temperature is a basic physical phenomenon. It is the most common and important process parameter used in the production process. Whether it is industrial and agricultural production, or scientific research and national defense modernization, it is inseparable from temperature measurement. Therefore, in various sensors , the temperature sensor is the most widely used one. The integrated temperature sensor came out in the 1980s. It was developed on the basis of the PN junction temperature sensor and has the characteristics of small size, good stability and low price. [0003] At present, the main implementation methods of the CMOS integrated temperature sensor include: a temperature sensor based on a MOS transistor and a CMOS BJT temperature sensor based on a parasitic bipolar tra...

AI Technical Summary

Problems solved by technology

Power consumption and accuracy are the main technical indicators for measuring CMOS integrated temperature sensors. Although today's CMOS integrated temperature sensors have made great progress in these two indicators compared with the past, the existing CMOS integrated temperature sensors still have power consumption. Therefore, it is necessary to propose a technical means to solve the above problems

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