Method for preparing bipolar nano-film memristor

Abstract

The invention discloses a method for preparing a bipolar nano-film memristor. The method adopts the principle that holes and ionized oxygen ions generated under bias voltage are taken as carriers, and the change in device resistance is realized by changing the number of holes and ionized oxygen ions generated. On the basis of the prior art, the process and the chemical formula of the variable-resistance film nano-ceramic material are simplified. The step of variable-resistance film ceramic material pre-sintering is omitted, nano-ceramic raw materials with lower sintering temperature are chosen, and a lower calcination temperature is adopted. Mg<2+> partially replaces Ti<4+> in B-substitution to increase the asymmetry of the molecular structure of Sr(Ti(1-x)Mgx)O(3-x) and increase the number of holes inside. Therefore, the preparation process is simplified, the process flow is shortened, the energy consumption of production and the manufacturing cost are lowered, and the memristive performance of the memristor is improved greatly.

Description

Technical field [0001] The invention relates to a preparation method of a single-layer nano-film memristor, in particular to a preparation method of a bipolar nano-film memristor; it belongs to the application field of micro-nano electronic devices and nonlinear circuits. Background technique [0002] Memristor (memory resistance) is the fourth passive circuit element after resistance, capacitance and inductance have entered the mainstream electronic field. It is a passive circuit element related to magnetic flux and electric charge. As early as 1971, the international pioneer of nonlinear circuit and cellular neural network theory, Leon Chua (Cai Shaotang) theoretically predicted the existence of memristors based on the logical integrity of circuit theory. In 2008, Hewlett-Packard Laboratories built a prototype memristor device experimentally for the first time, which confirmed LeonChua's theory about memristors, which attracted strong attention worldwide. Memristors have novel...

AI Technical Summary

Problems solved by technology

Most of them adopt the switch model and working mechanism similar to HP memristors, and the manufacturing process is complicated and the cost is high. It is not general and universal for the study of memristor characteristics, memristor circuit theory, and electronic circuit design.

[0006] (2) Commercial production has not yet been realized

[0007] It is difficult for most researchers to obtain a real memristor element, so many researchers cannot carry out hardware experiments in the real physical sense due to the lack of memristor elements when studying memristors and memristor circuits. Rely on simulation or simulated circuits for experimental research

However, the memristor simulation model and the analog circuit are far from the actual memristor characteristics, and the hardware implementation using the analog circuit is more concerned with simulating the memristor mathematical model and ignoring the essential physical characteristics of the memristor

[0008] (3) The preparation of physical memristors that have been reported requires high requirements and harsh conditions in terms of raw material selection and preparation process methods, and it is difficult for laboratories or scientific research units with ordinary conditions to complete the preparation of related physical memristor components.

[0015] 2. The preparation process is complicated, the preparation cycle is long, and the energy consumption is high:

[0017] 3. The material of the prepared memristor is hard and brittle, which is easy to be broken or damaged due to collision, and is not convenient for transportation

[0018] In addition, it also has the problems and deficiencies of relatively harsh process conditions and low product rate.

Images