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QLED device and preparation method thereof

A device and substrate technology, applied in the field of QLED devices and their preparation, can solve the problems of low crystallinity, many structural defects, limited transmission and light transmittance of the electron transport layer, etc. Effects of transmission and light transmission, quenching reduction, structural defect reduction

Inactive Publication Date: 2016-06-29
TCL CORPORATION
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  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a QLED device, aiming to solve the problem of electron transport materials, especially nano-zinc oxide, which are prepared by the existing low-temperature sol-gel method due to their low crystallinity and many structural defects. The problem of limited transmission and light transmission of the layer

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  • QLED device and preparation method thereof
  • QLED device and preparation method thereof
  • QLED device and preparation method thereof

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preparation example Construction

[0020] The embodiment of the present invention provides a method for preparing a QLED device, comprising the following steps:

[0021] S01. A substrate is provided, and a bottom electrode is formed on the substrate;

[0022] S02. Depositing an electron transport material on the bottom electrode, and performing RTP treatment on the electron transport material to obtain an electron transport layer;

[0023] S03. Depositing an interface modification material on the electron transport layer to form an interface modification layer, and the interface modification material is a material with a permanent dipole moment;

[0024] S04. Depositing a quantum dot light-emitting layer and a top electrode sequentially on the interface modification layer.

[0025] Specifically, in the above step S01, the choice of the substrate is not limited, a flexible substrate may be selected, and a hard substrate such as a glass substrate may also be selected. The method for forming the bottom electrode...

Embodiment 1

[0040] A method for preparing a QLED device, comprising the following steps:

[0041] S11. providing a substrate, forming a bottom electrode on the substrate;

[0042] S12. Deposit nano-zinc oxide on the bottom electrode, and perform RTP treatment on the nano-zinc oxide to obtain an electron transport layer, wherein the RTP treatment method is heat preservation treatment at 300°C in air for 30s;

[0043] S13. Depositing an interface modification material on the electron transport layer to form an interface modification layer, and the interface modification material is a material with a permanent dipole moment;

[0044] S14. Depositing a quantum dot light-emitting layer, a hole transport layer and a top electrode sequentially on the interface modification layer.

Embodiment 2

[0046] A method for preparing a QLED device, the method differs from that of Example 1 in that in the step of preparing an electron transport layer, the RTP treatment is heat preservation at 300°C for 30s in vacuum.

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Abstract

The invention provides a QLED device and a preparation method thereof. The preparation method of the QLED device comprises the following steps: providing a substrate, and forming a bottom electrode on the substrate; depositing an electron transmission material on the bottom electrode, and carrying out the RTP treatment on the electron transmission material to obtain an electron transmission layer; depositing an interface decorative material on the electron transmission layer to form an interface decorative layer, wherein the interface decorative material is a material with a permanent dipole moment; and successively depositing a quantum dot luminescent layer and a top electrode on the interface decorative layer.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a QLED device and a preparation method thereof. Background technique [0002] Quantum dots have the advantages of narrow luminescence peak and high quantum yield, and can be prepared by printing process, so quantum dot-based light-emitting diodes (ie, quantum dot light-emitting diodes: QLED) have recently received widespread attention, and their device performance indicators have also developed. fast. [0003] In order to improve the injection efficiency of electrons, an electron transport layer is usually arranged between the cathode of the QLED device and the quantum dot light-emitting layer. Existing electron transport materials can improve electron injection efficiency to a certain extent, thereby improving electron mobility. Especially nano-zinc oxide, as an electron transport material commonly used in QLED devices, its conduction band energy level is conduciv...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH01L21/324H10K50/00H10K50/16H10K71/00
Inventor 钱磊杨一行曹蔚然
Owner TCL CORPORATION
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