Method for utilizing low-temperature chemical vapor deposition technology to prepare amorphous carbon film
A vapor deposition method and low-temperature chemical technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of poor uniformity of amorphous carbon film, pollution of amorphous carbon film, and short service life of hot wire Advanced problems, to achieve the effect of low cost, good uniformity and low resistivity
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Embodiment 1
[0011] A method for preparing an amorphous carbon film by low-temperature chemical vapor deposition, the method comprising the following steps:
[0012] (1) cleaning monocrystalline silicon wafer;
[0013] (2) Put the cleaned monocrystalline silicon wafer into a quartz annealing furnace filled with high-purity oxygen for thermal oxidation treatment, so that a layer of silicon oxide film is formed on the surface. The method of thermal oxidation treatment of monocrystalline silicon wafers is: before heating up, put the cleaned monocrystalline silicon wafers into the quartz tube annealing furnace and at the same time pass high-purity oxygen into the quartz tube annealing furnace and keep it for 15 minutes, then put Slowly heat the quartz tube annealing furnace to 600°C for 35 minutes, then disconnect the heating power and take out the single crystal silicon wafer, at this time a layer of silicon oxide film is formed on the surface of the single crystal silicon;
[0014] (3) Usin...
Embodiment 2
[0017] A method for preparing an amorphous carbon film by low-temperature chemical vapor deposition, the method comprising the following steps:
[0018] (1) cleaning monocrystalline silicon wafer;
[0019] (2) Put the cleaned monocrystalline silicon wafer into a quartz annealing furnace filled with high-purity oxygen for thermal oxidation treatment, so that a layer of silicon oxide film is formed on the surface. The method of thermal oxidation treatment of monocrystalline silicon wafers is: before heating up, put the cleaned monocrystalline silicon wafers into the quartz tube annealing furnace, and at the same time, pass high-purity oxygen into the quartz tube annealing furnace and keep it for 17 minutes, then put Slowly heat the quartz tube annealing furnace to 750°C for 30 minutes, then disconnect the heating power and take out the monocrystalline silicon wafer. At this time, a layer of silicon oxide film is formed on the surface of the monocrystalline silicon;
[0020] (3)...
Embodiment 3
[0023] A method for preparing an amorphous carbon film by low-temperature chemical vapor deposition, the method comprising the following steps:
[0024] (1) cleaning monocrystalline silicon wafer;
[0025] (2) Put the cleaned monocrystalline silicon wafer into a quartz annealing furnace filled with high-purity oxygen for thermal oxidation treatment, so that a layer of silicon oxide film is formed on the surface. The method of thermal oxidation treatment of monocrystalline silicon wafers is: before heating up, put the cleaned monocrystalline silicon wafers into the quartz tube annealing furnace and at the same time pass high-purity oxygen into the quartz tube annealing furnace and keep it for 20 minutes, then put Slowly heat the quartz tube annealing furnace to 850°C for 25 minutes, then disconnect the heating power and take out the monocrystalline silicon wafer, at this time a layer of silicon oxide film is formed on the surface of the monocrystalline silicon;
[0026] (3) Us...
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