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Method for utilizing low-temperature chemical vapor deposition technology to prepare amorphous carbon film

A vapor deposition method and low-temperature chemical technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of poor uniformity of amorphous carbon film, pollution of amorphous carbon film, and short service life of hot wire Advanced problems, to achieve the effect of low cost, good uniformity and low resistivity

Active Publication Date: 2016-06-08
浙江天霁材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The uniformity of the amorphous carbon film prepared by the hot wire catalytic chemical vapor deposition method is not good, the life of the hot wire is not high, which increases the cost, and the heating wire may also pollute the deposited amorphous carbon film

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] A method for preparing an amorphous carbon film by low-temperature chemical vapor deposition, the method comprising the following steps:

[0012] (1) cleaning monocrystalline silicon wafer;

[0013] (2) Put the cleaned monocrystalline silicon wafer into a quartz annealing furnace filled with high-purity oxygen for thermal oxidation treatment, so that a layer of silicon oxide film is formed on the surface. The method of thermal oxidation treatment of monocrystalline silicon wafers is: before heating up, put the cleaned monocrystalline silicon wafers into the quartz tube annealing furnace and at the same time pass high-purity oxygen into the quartz tube annealing furnace and keep it for 15 minutes, then put Slowly heat the quartz tube annealing furnace to 600°C for 35 minutes, then disconnect the heating power and take out the single crystal silicon wafer, at this time a layer of silicon oxide film is formed on the surface of the single crystal silicon;

[0014] (3) Usin...

Embodiment 2

[0017] A method for preparing an amorphous carbon film by low-temperature chemical vapor deposition, the method comprising the following steps:

[0018] (1) cleaning monocrystalline silicon wafer;

[0019] (2) Put the cleaned monocrystalline silicon wafer into a quartz annealing furnace filled with high-purity oxygen for thermal oxidation treatment, so that a layer of silicon oxide film is formed on the surface. The method of thermal oxidation treatment of monocrystalline silicon wafers is: before heating up, put the cleaned monocrystalline silicon wafers into the quartz tube annealing furnace, and at the same time, pass high-purity oxygen into the quartz tube annealing furnace and keep it for 17 minutes, then put Slowly heat the quartz tube annealing furnace to 750°C for 30 minutes, then disconnect the heating power and take out the monocrystalline silicon wafer. At this time, a layer of silicon oxide film is formed on the surface of the monocrystalline silicon;

[0020] (3)...

Embodiment 3

[0023] A method for preparing an amorphous carbon film by low-temperature chemical vapor deposition, the method comprising the following steps:

[0024] (1) cleaning monocrystalline silicon wafer;

[0025] (2) Put the cleaned monocrystalline silicon wafer into a quartz annealing furnace filled with high-purity oxygen for thermal oxidation treatment, so that a layer of silicon oxide film is formed on the surface. The method of thermal oxidation treatment of monocrystalline silicon wafers is: before heating up, put the cleaned monocrystalline silicon wafers into the quartz tube annealing furnace and at the same time pass high-purity oxygen into the quartz tube annealing furnace and keep it for 20 minutes, then put Slowly heat the quartz tube annealing furnace to 850°C for 25 minutes, then disconnect the heating power and take out the monocrystalline silicon wafer, at this time a layer of silicon oxide film is formed on the surface of the monocrystalline silicon;

[0026] (3) Us...

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Abstract

The invention discloses a method for utilizing a low-temperature chemical vapor deposition technology to prepare an amorphous carbon film. The method comprises the following steps that 1, a mono-crystalline silicon piece is cleaned; 2, the cleaned silicon piece is placed into a high-temperature quartz annealing furnace filled with oxygen to be subjected to thermal oxidation treatment, so that a silicon oxide film is formed on the surface of the cleaned silicon piece; and 3, methane serves as reactant gas, and a plasma enhanced chemical vapor deposition method is adopted to deposit the amorphous carbon film on the surface of the silicon oxide film formed in the step 2. The amorphous carbon film prepared through the method has the beneficial effects of being simple in technology, good in uniformity, low in specific resistance, suitable for large-area preparation and the like. Moreover, the technology is compatible with an existing semiconductor process technology and is beneficial for application of the amorphous carbon film.

Description

technical field [0001] The invention relates to a method for preparing a thin film material, in particular to a method for preparing an amorphous carbon thin film by using a plasma enhanced chemical vapor deposition method. Background technique [0002] Amorphous carbon thin film is widely used in the fields of optics, semiconductor and machining due to its good wear resistance, low friction coefficient, good thermal conductivity and light transmittance, adjustable band gap, high hardness and stable chemical properties. applications are gaining more and more attention. At present, the methods for preparing amorphous carbon thin films mainly include micromechanical exfoliation, organic synthesis, silicon carbide pyrolytic epitaxial growth, chemical exfoliation, and chemical vapor deposition. Although the micromechanical exfoliation method can prepare high-quality amorphous carbon films, it has low controllability and is difficult to achieve large-scale preparation; the organ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/505
CPCC23C16/26C23C16/505
Inventor 姜礼华杨一名项长华谭新玉孙宜华肖婷向鹏
Owner 浙江天霁材料科技有限公司
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