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Terahertz circularly polarized light generating method based on narrow-band semiconductor indium antimonide

A technology of circularly polarized light and generation method, applied in optics, optical components, nonlinear optics, etc., can solve problems such as high cost and achieve the effect of wide modulation frequency

Inactive Publication Date: 2016-05-04
FUZHOU UNIV
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  • Description
  • Claims
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Problems solved by technology

These methods require the use of femtosecond laser amplifiers, which are expensive

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  • Terahertz circularly polarized light generating method based on narrow-band semiconductor indium antimonide
  • Terahertz circularly polarized light generating method based on narrow-band semiconductor indium antimonide
  • Terahertz circularly polarized light generating method based on narrow-band semiconductor indium antimonide

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Embodiment Construction

[0023] The technical scheme of the present invention will be described in detail below in conjunction with the drawings.

[0024] The present invention provides a novel terahertz polarization device based on a narrow-band semiconductor indium antimonide, which can effectively transform linearly polarized terahertz waves into circularly polarized terahertz waves. This kind of polarization device has the characteristics of wide modulation frequency, perfect circular polarization emission and tunability.

[0025] figure 1 It is a schematic diagram of the use of the terahertz probe polarizing device of the present invention, including an indium antimonide sample, incident ray polarized terahertz wave, linear polarizer and outgoing circularly polarized terahertz wave. The incident terahertz wave is increased by a linear polarizer, and then incident on the indium antimonide sample; the indium antimonide sample is loaded with a stable magnetic field perpendicular to the sample along the ...

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Abstract

The invention relates to a terahertz circularly polarized light generating method based on narrow-band semiconductor indium antimonide. An indium antimonide sample wafer is placed in a cryostat, incident ray polarization terahertz waves pass through a linear polarizing film to make the degree of polarization increased after temperature becomes stable, incident rays irradiate on the surface of the indium antimonide sample wafer after focusing, and an adjustable and stable magnetic field is perpendicularly loaded on the indium antimonide sample wafer. Terahertz circularly polarized light is obtained according to the frequency of incident terahertz by adjusting the incidence loading direction and intensity of the magnetic field. The method has the advantages that modulation frequency is wide, circular polarization output is prefect and a polarizing device is tunable.

Description

Technical field [0001] The invention relates to optics and terahertz science and technology, in particular to a method for generating terahertz circularly polarized light based on narrow-band semiconductor indium antimonide. Background technique [0002] Terahertz wave is the frequency of 0.1-10THz (1THz=10 12 Hz) electromagnetic wave, its corresponding wavelength range is 3mm-30μm, and the waveband is between traditional microwave and infrared. Terahertz technology has a wide range of applications in non-destructive testing, security imaging, communications and sensing. These applications not only require efficient terahertz emission sources and detectors, but also efficient optical devices to regulate terahertz waves, such as amplitude modulators, polarizers, wave plates, and high-speed switches. The lack of efficient and practical devices in the terahertz band to manipulate terahertz waves has restricted the development of terahertz technology. Among all these terahertz cont...

Claims

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Application Information

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IPC IPC(8): G02F1/09G02F1/01G02B27/28
CPCG02B27/286G02F1/0136G02F1/09
Inventor 王向峰任志英张生孔陈盈
Owner FUZHOU UNIV
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