P-i-n juncture photovoltaic device in molecules of carbon nano tube based on local district doping and preparation method

A p-i-n, carbon nanotube technology, used in photovoltaic power generation, semiconductor devices, electrical components, etc., can solve the problem that asymmetric structure cannot well achieve photovoltaic performance regulation, can not fully exert the excellent performance of carbon nanotubes, and increase contact resistance. and other problems, to achieve the effect of excellent photovoltaic performance, maintaining integrity and stable performance

Inactive Publication Date: 2016-04-20
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disordered network carbon nanotube film increases the contact resistance between carbon nanotubes and carbon nanotubes, so that the excellent performance of carbon nanotubes cannot be fully utilized.
In addition, the asymmetric structure cannot well realize the control of photovoltaic performance.

Method used

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  • P-i-n juncture photovoltaic device in molecules of carbon nano tube based on local district doping and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment includes the following steps:

[0035] In the first step, the ultrasonically dispersed carbon nanotube solution is spin-coated on the surface of the substrate. After the solvent is completely evaporated, the substrate is observed with a scanning electron microscope and the carbon nanotubes with a length of 5 μm are selected, and the carbon nanotubes are positioned with the aid of the prefabricated cross mark on the substrate.

[0036] In the second step, electron beam lithography and magnetron sputtering techniques are used to fabricate Au symmetrical electrodes at both ends of the carbon nanotubes, with an electrode spacing of 3 μm.

[0037] In the third step, electron beam photoresist is coated on the substrate, and one end of the carbon nanotube is exposed to a window by electron beam lithography technology, and the window size is 1 μm*1 μm. The exposed portion (1 μm) of the carbon nanotubes will be exposed to air after being developed and fixed. Th...

Embodiment 2

[0042] This embodiment includes the following steps:

[0043] In the first step, the ultrasonically dispersed carbon nanotube solution is coated on the surface of the substrate. After the solvent is completely evaporated, the substrate is observed with a scanning electron microscope and the carbon nanotubes with a length of more than 6 μm are selected, and the carbon nanotubes are positioned with the aid of the pre-fabricated cross marks on the substrate.

[0044] In the second step, electron beam lithography and magnetron sputtering techniques are used to fabricate Au symmetrical electrodes at both ends of the carbon nanotubes, with an electrode spacing of 4 μm.

[0045] In the third step, electron beam photoresist is coated on the substrate, and one end of the carbon nanotube is exposed to a window by electron beam lithography technology, and the window size is 1 μm*1 μm. The exposed portion (1 μm) of the carbon nanotubes will be exposed to air after being developed and fixed...

Embodiment 3

[0050] This embodiment includes the following steps:

[0051] In the first step, the ultrasonically dispersed carbon nanotube solution is coated on the surface of the substrate. After the solvent is completely evaporated, the substrate is observed with a scanning electron microscope and the carbon nanotubes with a length of 5 μm are selected, and the carbon nanotubes are positioned with the aid of the prefabricated cross mark on the substrate.

[0052] In the second step, electron beam lithography and magnetron sputtering technology are used to fabricate Pd electrodes and Al electrodes at both ends of the carbon nanotubes respectively to form asymmetric electrodes with an electrode spacing of 3 μm.

[0053] In the third step, electron beam photoresist is coated on the substrate, and one end of the carbon nanotube is exposed to a window by electron beam lithography technology, and the window size is 1 μm*1 μm. The exposed portion (1 μm) of the carbon nanotubes will be exposed ...

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Abstract

The invention provides a p-i-n juncture photovoltaic device in molecules of a carbon nano tube based on local district doping and a preparation method. Triethyloxonium hexachloroantimonate (OA) and polyethyleneimine (PEI) are used for doping the two ends of the single carbon nano tube respectively, and the middle of the carbon nano tube is reserved in an original state. Due to the fact that the triethyloxonium hexachloroantimonate doped carbon nano tube has the p type semiconductor conduction characteristic and the polyethyleneimine carbon nano tube has the n type semiconductor conduction characteristic, the p-i-n structure in the molecules of the carbon nano tube with a strong built-in electric field is successfully established. Carbon nano tubes of different radiuses are selected, and the photovoltaic device prepared from p-i-n junctures in the molecules can be used for different single-frequency light and can also be used for white light testing.

Description

technical field [0001] The invention relates to a technology in the field of photovoltaic device production, in particular to a p-i-n junction photovoltaic device and a preparation method thereof within a carbon nanotube molecule based on locally selected area doping. Background technique [0002] Semiconducting single-walled carbon nanotubes are one-dimensional semiconductor materials with excellent photoelectric properties. The band gap of single-walled carbon nanotubes is inversely proportional to the radius, which belongs to the direct band gap semiconductor, and has strong light absorption ability from ultraviolet to infrared spectral range. There is no defect structure in ideal single-walled carbon nanotubes, which greatly reduces the recombination probability of photogenerated electron-hole pairs. In addition, single-walled carbon nanotubes have high carrier mobility and mechanical strength. [0003] After searching the existing technologies, it is found that single...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/075H01L31/18
CPCH01L31/075H01L31/18Y02E10/548Y02P70/50
Inventor 陈长鑫
Owner SHANGHAI JIAO TONG UNIV
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