Doping structure of silicon-substrate electrooptical modulator

Abstract

The invention relates to a doping structure of a silicon-substrate electrooptical modulator. The doping structure comprises a silicon-substrate electrooptical modulator modulating region waveguide, and the waveguide sequentially comprises a first heavily-doped region, a second lightly-doped region, a third lightly-doped region and a fourth heavily-doped region in the transverse direction which is perpendicular to the extending direction of a protruding strip region of the waveguide. The second lightly-doped region and the third lightly-doped region form at least one longitudinal PN junction and at least one transverse PN junction, and the longitudinal direction is perpendicular to the transverse direction. The second lightly-doped region is in electric connection through the first heavily-doped region, and the third lightly-doped region is in electric connection through the fourth heavily-doped region. By means of the doping structure of the silicon-substrate electrooptical modulator, modulation energy consumption can be reduced while the modulation efficiency of the silicon-substrate electrooptical modulator is improved, each doped region of a waveguide core region can directly achieve electric connection through a lateral waveguide, and the high-speed modulation performance of the system is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon-based electro-optical modulator doping structure. Background technique [0002] With the development trend of speed-up and cost-reduction of communication and interconnection, a large number of communication and interconnection equipment are updated, and silicon-based transceiver systems have begun to be used commercially. However, the system consumes a lot of energy, and the pressure on communication and interconnection infrastructure has increased sharply. The modulator is an important component of the transceiver in the optical communication and optical interconnection system. Its energy consumption is second only to the laser, but the insertion loss of the modulator itself also increases the power consumption budget, so it is an important part of the current efforts to reduce energy consumption. Research object. [0003] There are two main types of doping st...

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Problems solved by technology

In addition, in the existing finger-junction technical solutions, in order to improve the photoelectric modulation efficiency of the silicon-based modulator, it is usually necessary to improve the doping structure in the waveguide of the modulator, but it is possible to make the core area of ​​the waveguide (such as the high In the slab region of the slab region, or the ridge region higher than the grating region in the sidewall grating waveguide), the electrical Connected doped regions, resulting in a significant drop in performance during high-speed modulation

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