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Power semiconductor modules with integrated Hall current sensors

A power semiconductor and Hall current technology, applied in the field of power semiconductor modules, can solve the problems of large space occupied by current sensors, unfavorable system miniaturization, slow response speed, etc., to achieve beneficial protection, reduce subsequent use costs, and increase integration. Effect

Active Publication Date: 2017-10-27
YANGZHOU GUOYANG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, installing the current sensor on the busbar takes up a lot of space, and sometimes it is even necessary to bend the busbar to match the installation of the current sensor. slower

Method used

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  • Power semiconductor modules with integrated Hall current sensors
  • Power semiconductor modules with integrated Hall current sensors
  • Power semiconductor modules with integrated Hall current sensors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Such as figure 1 As shown, a power semiconductor module integrating a Hall current sensor includes an output electrode 1, a negative electrode 2, a positive electrode 3, a sampling control terminal 4, a bottom plate 5, a ceramic substrate 6, and a housing 7. The output electrode 1 is connected to An output electrode arm 8 arranged parallel to the direction of the bottom plate 5, the output electrode arm 8 is connected to the ceramic substrate 6, and a sensor core 9 is set on the output electrode arm 8, so that each phase of the AC output electrode 1 passes through a sensor core 9. The sensor magnetic core 9 has an upward facing magnetic core opening, the opening of the magnetic core is the insertion position of the subsequent Hall element 10 , and the pin of the Hall element 10 faces upward.

[0016] Such as image 3 As shown, in order to cooperate with the insertion of the Hall element 10 , the casing 7 is provided with an insertion hole 11 at a corresponding positio...

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PUM

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Abstract

A power semiconductor module integrating a Hall current sensor, comprising an output electrode, a sampling control terminal, a bottom plate, a ceramic substrate, and a casing, the output electrode is connected to an output electrode arm arranged parallel to the direction of the bottom plate, and the output electrode arm is connected to the ceramic The substrates are connected, the output electrode arm is covered with a sensor core, the sensor core has an upward core opening, and a Hall element with pins facing upward is inserted into the core opening; the shell An insertion hole is provided at a corresponding position above the opening of the magnetic core, and pins of the Hall element pass through the insertion hole. The invention integrates the current sensor inside the power semiconductor module, increases the integration degree, miniaturization degree and stability of the control system, and reduces the subsequent use cost.

Description

technical field [0001] The invention relates to the field of power electronics, in particular to a power semiconductor module integrating a Hall current sensor. Background technique [0002] The power module is a power switch module packaged by power electronic power devices such as metal oxide semiconductor (power MOS tube), insulated gate field effect transistor (IGBT), and fast recovery diode (FRD) according to certain functions. It is mainly used for Power conversion in various occasions such as electric vehicles, photovoltaic power generation, wind power generation, and industrial frequency conversion. The topological structure of the power semiconductor module is single-tube, two-unit, six-unit, etc., and can be combined into half-bridge, three-phase full-bridge and other circuit forms according to needs. In actual use, it is often necessary to obtain the output current value. [0003] A defect of the traditional power semiconductor module is that it does not have th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/06
CPCH10N52/00H01L2924/19107H01L2224/48137H01L2224/48139H01L2224/49111
Inventor 王玉林滕鹤松
Owner YANGZHOU GUOYANG ELECTRONICS CO LTD
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