Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film transistor gate voltage supply circuit

一种薄膜晶体管、栅极电压的技术,应用在具有逻辑功能的逻辑电路、电气元件、电子开关等方向,能够解决变化大、显示面板无法正常显示、薄膜晶体管无法正常工作等问题

Active Publication Date: 2016-03-09
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF6 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the threshold voltage V between the gate and source of the thin film transistor TH As the temperature drift is relatively large, when the ambient temperature is lower than the preset temperature (for example, -10°C), the V of the thin film transistor TH big change
Under low temperature conditions, when the existing thin film transistor gate voltage supply circuit supplies a fixed voltage V to the gate of the thin film transistor GH , will cause V GH less than V TH , which in turn causes the thin film transistors to fail to work normally, and finally causes the display panel to fail to display normally

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor gate voltage supply circuit
  • Thin film transistor gate voltage supply circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0018] Please also refer to figure 1 and figure 2 , figure 1 It is a circuit block diagram of a thin film transistor gate voltage supply circuit in a preferred embodiment of the present invention; figure 2 It is a schematic structural diagram of a thin film transistor gate voltage supply circuit in a preferred embodiment of the present invention. The thin film transistor gate voltage supply circuit 1 is used to provide gate voltage for the thin film trans...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a thin film transistor gate voltage supply circuit. The thin film transistor gate voltage supply circuit is used for providing gate voltage supply for a thin film transistor. The thin film transistor gate voltage supply circuit includes a voltage generating circuit and a temperature compensation circuit, wherein the voltage generating circuit is used for generating original voltage, the temperature compensation circuit is electrically connected with the voltage generating circuit and is used for detecting ambient temperature, and the temperature compensation circuit performs compensation on the original voltage according to the difference value of the ambient temperature and preset temperature so as to obtain first voltage when the ambient temperature is smaller than the preset temperature, and provides the first voltage for the gate of the thin film transistor so as to drive the thin film transistor to work normally. The thin film transistor gate voltage supply circuit can drive the thin film transistor to work normally under low-temperature environment.

Description

technical field [0001] The invention relates to the display field, in particular to a thin film transistor gate voltage supply circuit. Background technique [0002] With the development of display technology, liquid crystal display devices (Liquid Crystal Display, LCD) have been favored by a large number of users due to advantages such as small size and low power consumption. Array substrate row drive technology (GateDriveronArray, GOA) is a technology that directly manufactures gate drive circuits or gate drive chips (GatedriverIC) on thin film transistor array substrates (ThinFilmTransistorArray, TFTArray) instead of external CMOS driver chips. . In the GOA technology, the driver chip can be directly made around the display panel, with fewer manufacturing procedures and lower product costs, and the TFT-LCD display panel has a higher integration level, and makes the display panel thinner. The gate voltage supply circuit of the thin film transistor in the prior art usuall...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/36
CPCG09G3/3696G09G3/36H03K17/145H03K19/20G09G3/3648G09G2310/0289G09G2310/08G09G2320/041
Inventor 曹丹
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products