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High speed deposition method and apparatus for same

A technology of inorganic thin film and preparation device, which is applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of difficult to apply substrate, achieve small particle amount, high product yield and simplify equipment structure Effect

Active Publication Date: 2016-03-02
RES & BUSINESS FOUNDATION SUNGKYUNKWAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, these methods are difficult to apply to substrates such as plastic films

Method used

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  • High speed deposition method and apparatus for same
  • High speed deposition method and apparatus for same
  • High speed deposition method and apparatus for same

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Embodiment Construction

[0021] Hereinafter, the embodiments of the present disclosure will be described in detail so that those skilled in the art can easily implement the embodiments. However, it should be noted that the present disclosure is not limited to these embodiments and examples, but can be implemented in various other ways. In the drawings, parts not directly related to the description are omitted to enhance drawing clarity, and the same reference numerals denote the same parts throughout the document.

[0022] Throughout the documents of this disclosure, the term "connected to" or "coupled to" is used to indicate the connection or coupling of one element to another element, and includes cases where an element is "directly connected or coupled to" another element and where Both where an element is "electrically connected or coupled" to another element via a further element.

[0023] Throughout the documents of this disclosure, the term "on" used to indicate the position of one element rel...

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Abstract

The invention relates to a high speed deposition method and an apparatus for the same. The deposition method comprises the following steps: carrying out a plasma treatment on a substrate by alternatively using a source gas and a reactant gas; and making the source gas and reactant gas carry out reactions on the surface of the substrate so as to form an inorganic film on the substrate; wherein the plasma treatments of source gas and reactant gas are independently carried out in separated plasma modules; the source gas comprises inert gas and precursor; and the precursor comprises free silicon, aluminum, zinc, and metals from groups of silicon, aluminum, and zinc.

Description

[0001] Cross References to Related Applications [0002] This application claims priority under 35USC119(a) to No. 10-2014-0100932 filed with the Korean Intellectual Property Office on Aug. 6, 2014, the entire contents of which are hereby incorporated by reference in their entirety. technical field [0003] The inventive disclosure described herein relates generally to methods for high-speed deposition of inorganic thin films and apparatuses for such methods. Background technique [0004] Compound thin films are used in various ways as gate dielectric films or intermetallic barrier films for semiconductor devices, semiconductor integrated circuits, compound semiconductors, solar cells, liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), etc., as protective films, And as a mask to prevent chemical reaction with surrounding materials, etc. Therefore, coating a uniform thin film with a highly stepped structure has drawn attention as an important technique as...

Claims

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Application Information

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IPC IPC(8): C23C16/44C23C16/54
Inventor 徐祥准赵成珉刘址范郑昊均
Owner RES & BUSINESS FOUNDATION SUNGKYUNKWAN UNIV
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