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Heterojunction solar cell and preparation method thereof

A solar cell and heterojunction technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of crystalline silicon wafer contamination, reduce battery fill factor, and reduce the surface passivation quality of crystalline silicon wafers, so as to improve passivation The effect of optimizing quality, improving fill factor and conversion efficiency

Inactive Publication Date: 2016-02-03
ENN SOLAR ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The existing manufacturing process of heterojunction solar cells is as follows: figure 1 As shown, it includes: crystalline silicon wafer texture cleaning 102, first intrinsic layer I layer deposition 104, doped layer P (or N) layer deposition 106, second intrinsic layer I layer deposition 108, doped layer N ( or P) layer deposition 110, transparent conductive film deposition 112, screen printing 114, annealing 116, wherein, in the deposition process, the crystalline silicon wafer needs to be transferred to different types of thin film deposition chambers, and the crystalline silicon wafer It will be in contact with the tray or substrate, and the impurities or pollutants on the tray or substrate are easy to stick to the crystalline silicon wafer, thereby contaminating the crystalline silicon wafer and reducing the passivation quality of the surface of the crystalline silicon wafer; at the same time, during the transfer During the process, the crystalline silicon wafer is exposed to the air, which is easily oxidized and produces an oxide layer on the surface of the crystalline silicon wafer, which reduces the passivation quality of the surface of the crystalline silicon wafer, thereby reducing the fill factor of the battery and reducing the yield of the battery
[0004] To sum up, in the existing manufacturing process of silicon-based heterojunction solar cells, during the deposition process, when the crystalline silicon wafer is transported between multiple deposition chambers, it is in contact with the tray or the substrate, which is easy to be stained. Pollution, and exposed to the air is easily oxidized to form an oxide layer, which reduces the passivation quality of the surface of the crystalline silicon wafer, thereby reducing the fill factor of the battery, resulting in a decrease in the yield of the battery

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  • Heterojunction solar cell and preparation method thereof
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  • Heterojunction solar cell and preparation method thereof

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preparation example Construction

[0029] A method for preparing a heterojunction solar cell provided in an embodiment of the present invention, such as figure 2 shown, including:

[0030] Step 202, depositing a first silicon thin film layer on the first side surface of the crystalline silicon wafer, and depositing a second silicon thin film layer on the second side surface of the crystalline silicon wafer;

[0031] Step 204, before depositing the second silicon thin film layer on the second side surface of the crystalline silicon wafer, cleaning the first silicon thin film layer and the second side surface of the crystalline silicon wafer, and / or depositing the second silicon thin film layer on the second side surface of the crystalline silicon wafer After the silicon thin film layer is removed, the first silicon thin film layer and the second silicon thin film layer are cleaned, wherein the first side surface of the crystalline silicon wafer is opposite to the second side surface.

[0032] In the method pro...

Embodiment approach 1

[0035] Embodiment 1: Before depositing the second silicon thin film layer on the second side surface of the crystalline silicon wafer, the first silicon thin film layer and the second side surface of the crystalline silicon wafer are cleaned. This embodiment will be described in detail below in conjunction with the manufacturing process of the heterojunction solar cell. Such as image 3 As shown, the preparation process of heterojunction solar cells includes:

[0036] Step 302, texturizing and cleaning the crystalline silicon wafer, that is, performing texturing and cleaning on the crystalline silicon wafer to remove organic matter, metal contamination and oxides on the surface of the crystalline silicon wafer;

[0037] Step 304, depositing the first intrinsic layer I, that is, depositing the first intrinsic layer I on the first side surface of the crystalline silicon wafer after texturing and cleaning;

[0038] Step 306, depositing the doped layer P (or N) layer, that is, d...

Embodiment approach 2

[0047] Embodiment 2: After depositing the second silicon thin film layer on the second side surface of the crystalline silicon wafer, the first silicon thin film layer and the second silicon thin film layer are cleaned. This embodiment will be described in detail below in conjunction with the manufacturing process of the heterojunction solar cell. Such as Figure 4 As shown, the preparation process of heterojunction solar cells includes:

[0048] Step 402, texturizing and cleaning the crystalline silicon wafer, that is, performing texturing and cleaning on the crystalline silicon wafer to remove organic matter, metal contamination and oxides on the surface of the crystalline silicon wafer;

[0049] Step 404, depositing the first intrinsic layer I, that is, depositing the first intrinsic layer I on the first side surface of the crystalline silicon wafer after texturing and cleaning;

[0050] Step 406, depositing the doped layer P (or N) layer, that is, depositing the doped la...

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Abstract

The invention discloses a heterojunction solar cell and a preparation method thereof, and aims at removing contamination and the oxide layer on the surface of a crystalline silicon wafer and silicon thin film layers in the transmission process so that passivation quality of the surface of the crystalline silicon wafer is enhanced and the fill factor and conversion efficiency of the cell are enhanced. The preparation method of the heterojunction solar cell comprises the steps that a first silicon thin film layer is deposited on the surface of the first side of the crystalline silicon wafer, and a second silicon thin film layer is deposited on the surface of the second side of the crystalline silicon wafer; and the first silicon thin film layer and the surface of the second side of the crystalline silicon wafer are cleaned before deposition of the second silicon thin film layer on the surface of the second side of the crystalline silicon wafer, and / or the first silicon thin film layer and the second silicon thin film layer are cleaned after deposition of the second silicon thin film layer on the surface of the second side of the crystalline silicon wafer.

Description

technical field [0001] The invention relates to the technical field of heterojunction solar cells, in particular to a heterojunction solar cell and a preparation method thereof. Background technique [0002] With the development of the photovoltaic industry and its market, the development of high-efficiency, low-cost heterojunction solar cells has become a major research direction. Hydrogenated amorphous silicon (a-Si:H) / crystalline silicon (c-Si) heterojunction solar cells combine the advantages of crystalline silicon and thin-film silicon technologies. It has the advantage of mobility, and has the characteristics of simple preparation process and high conversion efficiency. [0003] The existing manufacturing process of heterojunction solar cells is as follows: figure 1 As shown, it includes: crystalline silicon wafer texture cleaning 102, first intrinsic layer I layer deposition 104, doped layer P (or N) layer deposition 106, second intrinsic layer I layer deposition 10...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/074H01L31/18H01L21/02
CPCH01L21/02068H01L21/02096H01L31/074H01L31/1804Y02E10/547Y02P70/50
Inventor 王进张娟陈光羽谷士斌张林田小让侯洪涛赵冠超何延如杨荣王琦李立伟郭铁
Owner ENN SOLAR ENERGY
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