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Cleaning technology for sapphire wafers

A sapphire wafer and organic solvent technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve problems such as low efficiency and incomplete cleaning, and achieve the goals of simple steps, reduced water consumption, and improved efficiency and quality Effect

Active Publication Date: 2016-01-27
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the defects of incomplete cleaning and low efficiency in the prior art using organic solvent ultrasonic heating cleaning method, the present invention provides a sapphire wafer cleaning process with complete cleaning and high efficiency

Method used

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  • Cleaning technology for sapphire wafers
  • Cleaning technology for sapphire wafers

Examples

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Effect test

Embodiment 1

[0032] Example 1: A cleaning process for sapphire wafers, using physical wiping and high-power ultrasonic methods to remove oil and dirt with strong adhesion on the surface of the wafer, and then thoroughly cleaning the residual dirt on the surface with a mixed solution of sulfuric acid and hydrogen peroxide . Include the following steps:

[0033] (1) Place the sapphire wafer in the ultra-clean bench, use tweezers to pick up a cotton ball dipped in absolute ethanol and wipe it on the upper surface of the wafer (epitaxial layer growth surface), replace it with a new cotton ball and wipe it again;

[0034] (2) Place the sapphire wafer that has been wiped in step (1) in absolute ethanol, and perform ultrasonic heating in an ultrasonic instrument for 5 minutes, using ultrasonic heating at a temperature of 70°C, and an ultrasonic power frequency of 30Khz;

[0035] (3) The wafer completed by ultrasonic in step (2) is placed in the mixed solution filled with sulfuric acid hydrogen p...

Embodiment 2

[0041] Embodiment 2: a kind of cleaning process of sapphire wafer, step is as follows:

[0042] (1) Place the sapphire wafer in the ultra-clean bench, take a cotton ball dipped in acetone and wipe it on the surface of the wafer, replace it with a new cotton ball and wipe it again;

[0043] (2) Place the sapphire wafer that has been wiped in step (1) in absolute ethanol, and perform ultrasonic heating in an ultrasonic instrument for 6 minutes, using ultrasonic heating at a temperature of 70°C, and an ultrasonic power frequency of 25Khz;

[0044] (3) The wafer completed by ultrasonic in step (2) is placed in the mixed solution filled with sulfuric acid hydrogen peroxide and rinsed for 10 seconds, sulfuric acid: hydrogen peroxide=1000mL: 500mL, the concentration of sulfuric acid is 98%, and the concentration of hydrogen peroxide is 30%.

[0045] (4) Put the wafer after rinsing in step (3) into the quick discharge rinse tank (QDR) and use deionized water to clean it for 5 minutes by...

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Abstract

The invention discloses a cleaning technology for sapphire wafers. The method comprises steps of firstly removing most of highly-adhered oil stains and dirty points on surfaces of wafers using a physical cleaning sheet with combination of an ultrasonic method, thoroughly cleaning residual stains on the surfaces using a mixed solution of sulfuric acid and hydrogen peroxide, then performing cleaning in a fast-exhaust rinsing tank, and performing spin drying and blow drying. The surface of a cleaned wafer is clean and damage-free, and the enforcement efficiency is extremely high. The method can be used for cleaning in the epitaxial layer growth process of sapphire wafer GaN-based LED chips, the PSS patterned growth and the tube core front segment manufacturing process.

Description

technical field [0001] The invention relates to a cleaning process for a sapphire wafer, which belongs to the technical field of semiconductor processing. Background technique [0002] For the production of GaN-based LED chips, the selection of substrate materials is the primary consideration. At present, there are three main materials available in the market, sapphire substrates, silicon substrates and silicon carbide substrates. The sapphire substrate is favored by people because of the following advantages: First, the production technology of the sapphire substrate is mature and the device quality is good; second, the sapphire substrate is stable and can be used in the high-temperature growth process; The bottom has high mechanical strength and is easy to process and clean. [0003] At present, sapphire is generally used as the substrate material in the market, and most epitaxial layers of GaN-based materials and devices are also grown on sapphire substrates. As the sem...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02052H01L21/02057
Inventor 徐晓强彭璐黄博王全新徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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