Planar heterojunction sensitized organic fluorescence light-emitting diode and preparation method therefor

A light-emitting diode and heterojunction technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as short service life of blue phosphorescent OLED devices, difficulty in reducing device driving voltage, and cumbersome device preparation process, etc. , to achieve the effect of reducing material cost, reducing material types, and less preparation process

Active Publication Date: 2016-01-20
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, rare metals are contained in phosphorescent luminescent materials, which will greatly limit the cost reduction of phosphorescent OLED devices. At the same time, problems such as short lifespan and poor light color purity of blue phosphorescent OLED devices have been difficult to solve.
[0003] These sensitized fluorescent OLED devices using materials with thermally activated delayed fluorescence characteristics as sensitized hosts or auxiliary hosts have the following disadvantages: (1) multi-layer organic layers make the device preparation process cumbersome, which is not conducive to the reduction of time cost; (2) The multi-layer and multi-type materials greatly increase the cost of materials required for device preparation; (3) There is a problem of phase stability between different organic phases, which may affect the life of the device; (4) Between different organic layers It is easy to have an interface voltage drop, which makes it difficult to reduce the driving voltage of the device and increases the power consumption of the device when it is working

Method used

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  • Planar heterojunction sensitized organic fluorescence light-emitting diode and preparation method therefor
  • Planar heterojunction sensitized organic fluorescence light-emitting diode and preparation method therefor
  • Planar heterojunction sensitized organic fluorescence light-emitting diode and preparation method therefor

Examples

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Embodiment 1

[0046]Take a number of ITO conductive glass substrates with the same batch number, the size is 30 mm × 30 mm, the thickness of ITO is about 90 nanometers, and its square resistance is about 20 ohms / square. Sequentially use acetone, special detergent for micron semiconductors, deionized water, and isopropanol to ultrasonically clean for 15 minutes to remove dirt on the surface of the substrate. Then put it into an incubator and dry it at 80 degrees Celsius for later use. The dried ITO substrate was treated with plasma ignition equipment for 4 minutes to further remove organic pollutants attached to the surface. Then the ITO substrate was transferred to an anhydrous and oxygen-free glove box filled with high-purity nitrogen. In this glove box, the devices are loaded into the vacuum plating chamber. Turn on the mechanical pump and molecular pump, when the plating chamber reaches 4×10 -4 After the high vacuum, the thermal evaporation film starts. Using a specific mask, sequent...

Embodiment 2

[0051] The preparation process is the same as in Example 1 but without the anode buffer layer, and the P-type organic semiconductor materials are respectively selected as DMQA-doped TAPC (the doping concentration is 0.7%, molar ratio) and DMQA-doped TCTA (the doping concentration is 1.1%, molar ratio), the N-type organic semiconductor material is TmPyTZ doped with DMQA (doping concentration is 0.7%, molar ratio). Control the thickness of the P-type organic semiconductor material layer to be 25 nanometers and the thickness of the N-type organic semiconductor material layer to be 60 nanometers to obtain planar heterojunction sensitized organic fluorescent light-emitting diodes: ITO glass substrate / DMQA doped TAPC (25 nano) / DMQA-doped TmPyTZ (60 nm) / LiF (1 nm) / Al (device 1) and ITO glass substrate / DMQA-doped TCTA (25 nm) / DMQA-doped TmPyTZ (60 nm) / fluorine Lithium oxide (1 nm) / aluminum (device 2). The device is a device type in which a double-sided P-type semiconductor material a...

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Abstract

The invention belongs to the technical field of organic photoelectric materials, and discloses a planar heterojunction sensitized organic fluorescence light-emitting diode and a preparation method therefor. The diode comprises a substrate, a positive electrode, a P type organic semiconductor layer, an N type organic semiconductor layer and a negative electrode that are laminated in sequence; at least one layer of the P type organic semiconductor layer and the N type organic semiconductor layer is doped with a fluorescent material; the P type organic semiconductor layer is made from an organic conductor material capable of well conducting holes, and the N type organic semiconductor layer is made from an organic conductor material capable of well conducting electronics. The electroluminescence spectrum of the organic fluorescence light-emitting diode comes from the doped organic fluorescent material, so that the organic fluorescence light-emitting diode is lower in driving voltage and higher in luminous efficiency, the internal quantum efficiency can reach 100% theoretically, and the organic fluorescence light-emitting diode is wide in application prospects.

Description

technical field [0001] The invention belongs to the technical field of organic photoelectric materials, and in particular relates to a planar heterojunction sensitized organic fluorescent light-emitting diode and a preparation method thereof. Background technique [0002] At present, the research on organic light-emitting diodes (OLEDs) has entered the stage of industrial application, and scientific research institutes, universities, and enterprises have invested a lot of manpower, material resources, and financial resources to carry out related research and application work. The research began in 1987. Dr. Deng Qingyun of Kodak Company of the United States used the sandwich device structure in the patent US4356429 to develop an OLED device with a luminous brightness of 1000cd / m2 driven by a DC voltage of 10V. 2 , so that OLED has achieved an epoch-making development. However, in this type of fluorescent OLED device, due to the limitations of spin statistics rules, only 25%...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/656H10K85/654H10K50/121H10K71/00
Inventor 苏仕健陈东成曹镛
Owner SOUTH CHINA UNIV OF TECH
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