Czochralski method single-crystal silicon growth flow field control technology

A control technology, a technology of single crystal silicon, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as failure to achieve predetermined effects

Inactive Publication Date: 2016-01-13
SHANGHAI ADVANCED SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the known technology, especially when the crystal diamete

Method used

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  • Czochralski method single-crystal silicon growth flow field control technology
  • Czochralski method single-crystal silicon growth flow field control technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] To grow single crystal silicon with a diameter of 154mm, a crucible with a diameter of 308mm was used, the rotation speed of the crystal was 10rpm, the rotation speed of the crucible was 5rpm, and the rotation direction of the crystal was opposite to that of the crucible. The double helix structure bottom heater made of hard carbon material, the size of the bottom heater is 154mm, the central resistivity is high, and the resistivity decreases from the center to the outside, and the resistance change is controlled by controlling the change of the width of the heater, which decreases every 10cm 5%. During crystal growth, the temperature at the center of the bottom of the crucible is controlled to be 5°C higher than that of the surrounding walls of the crucible. The flow field of the melt is divided into two parts, inside and outside. The diameter of the inner volume is about 180mm, and it flows from the center to the outside as the crystal rotates. The outer roll rotates...

Embodiment 2

[0045] To grow single crystal silicon with a diameter of 154mm, a crucible with a diameter of 308mm was used, the rotation speed of the crystal was 10rpm, the rotation speed of the crucible was 5rpm, and the rotation direction of the crystal was opposite to that of the crucible. The double helix structure bottom heater made of hard carbon material, the size of the bottom heater is 154mm, the central resistivity is high, and the resistivity decreases from the center to the outside, and the resistance change is controlled by controlling the change of the width of the heater, which decreases every 10cm 5%. During crystal growth, the temperature at the center of the bottom of the crucible is controlled to be 8°C higher than that at the surrounding walls of the crucible. The flow field of the melt is divided into two parts, inside and outside. The diameter of the inner volume is about 205mm, and it flows from the center to the outside as the crystal rotates. The outer roll rotates...

Embodiment 3

[0047] On the basis of Example 2, the power of the bottom heater was increased, and the temperature at the center of the bottom of the crucible was controlled to be 10° C. higher than that of the surrounding walls of the crucible. The flow field of the melt is divided into two parts, inside and outside. The diameter of the inner volume is about 220mm, and it flows from the center to the outside as the crystal rotates. The outer roll rotates with the crucible, flowing from the surrounding to the inside. After the two streams meet, they flow from the surface to the inside. The temperature gradient change at the growth interface is 9%, the crystal pulling speed is first fast and then slow, and the average speed of the equal-diameter growth section is 2.8mm / min. After dicing the wafer from the single crystal, the overall change in oxygen content on the analyzed wafer was 4.3%.

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PUM

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Abstract

Disclosed herein is a Czochralski method single-crystal silicon growth flow field control technology. In the technology, a natural convection Gr from outer side to center of a melt is formed in a main heater, so that through rotation of a crucible, the melt flows from the outer side of the crucible to the center with axial temperature gradient Tc. Rotation of the crystal forms a forced convection Re. A bottom heater is arranged on the bottom of the crucible, which enables the temperature at the bottom of the cruible to be higher than that of the periphery of the cruible to form convection Gz from the center in an upward manner. The bottom heater is in a double-spiral involute structure and is moved vertically with the crucible synchronously. The melt is divided into an inner flow field zone and an outer flow field zone by means of control of the condition Gz*Re > Gr*Tc, wherein the two flow field zones are mixed at the central zone of the crystal and a crucible wall with an optimum point position being (d<si>+d<c>)/2. The technology can control the temperature distribution at the growth interface of the crystal and the oxygen distribution in the melt, and further control element uniformity in the crystal through pulling rate.

Description

technical field [0001] The present invention relates to a flow field control technology for single crystal silicon growth by pulling method, in particular to the thermal field control technology in the Czochralski method single crystal silicon growth process, which uses heating at the bottom of the crucible to control the flow field of the silicon melt and control the flow field of the single crystal. The distribution of impurities and doping elements, so as to obtain high-quality single crystal silicon. Background technique [0002] In the manufacturing process of monocrystalline silicon, the Czochralski method (Czochralski, abbreviated as CZ) is most commonly used. In the Czochralski method, polycrystalline silicon is filled in a quartz glass crucible (also called a quartz crucible), and then heated and melted to form silicon Melt, the seed crystal is immersed in the silicon melt and then rotated upwards to pull it, and the silicon solidifies and crystallizes at the interf...

Claims

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Application Information

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IPC IPC(8): C30B15/20C30B29/06
Inventor 张俊宝山田宪治刘浦锋宋洪伟陈猛
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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