Resistive random access memory cell working method
A resistive random and storage unit technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve the problem of affecting bit writing, achieve the effect of reducing the impact and prolonging the moving time
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[0034] figure 1 It is a schematic circuit diagram of a resistive random access memory unit according to an embodiment of the present invention. Please refer to figure 1 , in this embodiment, the resistive random access memory unit 100 includes, for example, a variable impedance element VRE and a transistor M1 (ie, a switching element), wherein the variable impedance element VRE can be a voltage-controlled switching element or a current-controlled switching element. The variable impedance element VRE is coupled between the drain voltage VD and the drain of the transistor M1, that is, the variable impedance element VRE is connected in series with the transistor M1, the gate of the transistor receives a gate control voltage VG, and the source of the transistor Receive a ground voltage GND. Moreover, the variable impedance element VRE has a first electrode E1, a switching medium (switching medium) SM1 and a second electrode E2, wherein the material of the first electrode E1 is, ...
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