Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for removing impurities by deeply purifying ammonium paratungstate

A kind of ammonium paratungstate, deep technology, applied in the field of tungsten smelting, can solve the problem of unable to remove potassium and sodium, and achieve the effect of remarkable impurity removal, easy removal, and good volatility

Active Publication Date: 2015-12-30
CNMC GUANGXI PGMA
View PDF5 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Relevant literature reports and patents: The two-step ion exchange method discussed in the patent CN86108390A prepares high-purity ammonium paratungstate, both times use alkaline anion exchange resin to purify and remove impurities, and have a certain purification effect on phosphorus, arsenic, silicon, etc. in the product , but cannot remove the potassium and sodium in the product; a process technology for producing high-purity ammonium paratungstate mentioned in the patent CN101643245B, the method is to adjust the ion exchange process, and carry out deep impurity removal through enhanced adsorption and subsequent filtration, but this technology The method cannot deeply purify and remove active metal impurities such as potassium and sodium

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing impurities by deeply purifying ammonium paratungstate

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0031] The zero-grade ammonium paratungstate product that meets the GBT10116-2007 standard is subjected to deep purification and impurity removal to prepare high-purity ammonium paratungstate products.

[0032] Standard sample APT-0 product: WO 3 The content is 89%, and the main metal impurity content in the product is shown in the following table:

[0033] Element

K

Na

Mg

Ga

Cu

Al

Content (in WO 3 as reference ppm)

10

9.8

5

8.5

3

4

[0034] The ammonium paratungstate product is converted into a tungstic acid solution for use through processes such as acidification-filtration-dissolving, wherein H 2 WO 4 WO in solution 3The concentration is 230g / L. The K6-4 resin was activated with hydrochloric acid 1.8 times the volume of the resin, and the concentration of hydrochloric acid was 3 mol / L. The tungstic acid solution is pumped into the ion exchange column at a flow rate of 20-30ml / s. The specification...

example 2

[0039] The zero-grade ammonium paratungstate product that meets the GBT10116-2007 standard is subjected to deep purification and impurity removal to prepare high-purity ammonium paratungstate products.

[0040] Standard sample APT-1 Product: WO 3 The content of the main metal impurities in the product is 88.5%, as shown in the following table:

[0041] Element

K

Na

Mg

Ga

Cu

Al

Content (in WO 3 as reference ppm)

15

14.7

6.8

9.8

5.0

6.2

[0042] The ammonium paratungstate product is converted into a tungstic acid solution for use through processes such as acidification-filtration-dissolving, wherein H 2 WO 4 WO in solution 3 The concentration is 240g / L. The K6-4 resin was activated with hydrochloric acid 1.8 times the volume of the resin, and the concentration of hydrochloric acid was 3 mol / L. The tungstic acid solution is pumped into the ion exchange column at a flow rate of 20-30ml / s. The specificat...

example 3

[0047] The zero-grade ammonium paratungstate product that meets the GBT10116-2007 standard is subjected to deep purification and impurity removal to prepare high-purity ammonium paratungstate products.

[0048] Standard sample APT-1 Product: WO 3 The content of the main metal impurities in the product is 88.5%, as shown in the following table:

[0049] Element

K

Na

Mg

Ga

Cu

Al

Content (in WO 3 as reference ppm)

15

14.7

6.8

9.8

5.0

6.2

[0050] The ammonium paratungstate product is converted into a tungstic acid solution for use through processes such as acidification-filtration-dissolving, wherein H 2 WO 4 WO in solution 3 The concentration is 240g / L. The K6-4 resin was activated with hydrochloric acid 1.8 times the volume of the resin, and the concentration of hydrochloric acid was 3 mol / L. The tungstic acid solution is pumped into the ion exchange column at a flow rate of 20-30ml / s. The specificat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for removing impurities by deeply purifying ammonium paratungstate. The method comprises the following steps of dissolving international zero-grade or first-grade ammonium paratungstate to prepare a to-be-treated solution; sequentially adsorbing the to-be-treated solution with cation exchange resin and anion exchange resin; then analyzing wolframate radical ions adsorbed by the anion exchange resin by using an analytical agent to obtain a analyzed solution; performing evaporation crystallization on the analyzed solution to obtain high-purity ammonium paratungstate. The method disclosed by the invention has the advantages of simple process, easiness in realization and wide application; in addition, the obtained ammonium paratungstate is high in purity.

Description

technical field [0001] The invention relates to the technical field of tungsten smelting, in particular to a method for deep purification and impurity removal of ammonium paratungstate. Background technique [0002] The improvement of LSI integration in microelectronics technology puts forward higher requirements on materials, and traditional Si-based devices are no longer applicable. High-purity tungsten or ultra-pure tungsten (5N or 6N) is widely used as gate electrode material, wiring material and shielding metal material for semiconductor large-scale integrated circuits due to its high electron migration resistance, high temperature stability and very high electron emission coefficient. . High-purity metal tungsten target is one of the basic materials for manufacturing integrated circuits, and its market prospects are closely related to the development of integrated circuits. Using high-purity tungsten can reduce or even eliminate the influence of harmful impurities an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G41/00
CPCC01G41/00C01P2006/80
Inventor 班双李敏
Owner CNMC GUANGXI PGMA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com