Fan-out packaging structure and production technology of high power device

A technology of packaging structure and production process, which is applied in the direction of electrical solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of thermal management performance limitations, low performance, complex process, etc., and solve the problem of SMT process equipment Dependence, low cost, and simple process

Active Publication Date: 2015-12-16
NAT CENT FOR ADVANCED PACKAGING
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the mainstream fan-out packaging is still based on the injection molding (molding) method based on the wafer process. The main fan-out RDL uses sputtered metal film as the seed layer or wafer. The heat dissipation of the package made by this structure The management performance is very limited; in addition, the process is also characterized by high cost and complicated process, which leads to high cost and low performance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fan-out packaging structure and production technology of high power device
  • Fan-out packaging structure and production technology of high power device
  • Fan-out packaging structure and production technology of high power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] The present invention will be further described below in conjunction with specific drawings.

[0049] The present disclosure will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the disclosure are shown. These embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these examples are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. It should be noted that although a relatively complete manufacturing process of a chip package device will be described below, some process steps are optional and there are alternative implementations.

[0050] Such as Figure 15 As shown, the high-power device fan-out packaging structure includes a core board 4, and a slot body 5 connecting the front and back sides of the core board 4 is opened on the c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a fan-out packaging structure and the production technology of a high power device. The fan-out packaging structure is characterized by comprising a core board, wherein a groove body of the core board is provided with a chip, the core board, the chip, a lower-layer medium material and an upper-layer medium material are stitched together, the upper-layer medium material is arranged above the back surface of the core board, the surface of the upper-layer medium material is provided with a metal layer, the upper-layer medium material is provided with an opening, the opening is arranged above the back surface of the chip, a heat sink is filled in the opening, the lower surface of the lower-layer medium material is provided with a welding resistance layer, the welding resistance layer is provided with an RDL line layer, a welding disc of the RDL line layer is provided with a BGA ball, the lower-layer medium material is provided with a laser blind hole, the laser blind hole is filled with a plated metal, the RDL line layer is mutually connected with the welding disc on the front surface of the chip through the plated metal in the laser blind hole, and the surface of the chip is wrapped in a resin layer. The fan-out packaging structure solves a heat radiation problem existing in fan-out packaging of the high power device, the technology is simple, and the fan-out packaging structure is compatible with multiple chips.

Description

technical field [0001] The invention relates to a high-power device fan-out packaging structure and production technology, belonging to the field of microelectronic advanced packaging technology. Background technique [0002] The traditional fan-out packaging structural components are embedded in resin and dissipate heat through the front side. This structure has relatively large thermal resistance and is suitable for packaging low-power devices. [0003] At present, the mainstream fan-out packaging is still based on the injection molding (molding) method based on the wafer process. The main fan-out RDL uses sputtered metal film as the seed layer or wafer. The heat dissipation of the package made by this structure The management performance is very limited; in addition, the process is also characterized by high cost and complicated process, which leads to high cost and low performance. Contents of the invention [0004] The purpose of the present invention is to overcome ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L23/367H01L21/56H01L21/60
CPCH01L2224/04105H01L2224/12105H01L2224/19H01L2224/32245H01L2224/73267H01L2224/92244
Inventor 郭学平郝虎
Owner NAT CENT FOR ADVANCED PACKAGING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products