Fin type field effect transistor structure and manufacturing method thereof

A technology of fin field effect and fabrication method, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of difficulty in controlling the width of fins, complex process steps, etc.

Pending Publication Date: 2015-11-11
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the manufacturing method of the fin field effect transistor structure according to the prior art, the process steps are relatively complicated, and sometimes it is difficult to control the width of the fin and the interval between each fin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fin type field effect transistor structure and manufacturing method thereof
  • Fin type field effect transistor structure and manufacturing method thereof
  • Fin type field effect transistor structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0031] A preferred embodiment of the present invention provides a method of forming a fin structure. Among them, an initial fin structure is formed on Si by photo / etch, and SiGe / Si / SiGe / … multilayer films are epitaxially grown on the initial fin structure in sequence, and then grooves are formed in the multilayer films by removing SiGe. Fill the groove with silicon oxide, and then remove excess Si and SiGe by polishing or etching. SiGe is further etched back to form a multi-Si fin structure.

[0032] Of course, the epitaxial materials are preferably SiGe and Si, but the present invention is not limited to these two materials, SiGe and Si.

[0033] specifically, Figure 1 to Figure 6 Each step of the fabrication method of the fin field effect ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a fin type field effect transistor structure and a manufacturing method thereof. The manufacturing method of the fin type field effect transistor structure includes: forming an initial fin-shaped structure on a substrate by photoetching and etching; expitaxially growing on the initial fin-shaped structure an inverted U-shaped thin film laminated structure at least containing a first material layer and a second material layer; filling a third material in an outer side of the inverted U-shaped thin film laminated structure; etching the third material and the inverted U-shaped thin film laminated structure, thereby exposing the initial fin-shaped structure; and further etching the first material layer, thereby exposing a fin-shaped structure formed by the initial fin-shaped structure and the second material layer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a structure of a fin field effect transistor and a manufacturing method thereof. Background technique [0002] With the development of integrated circuits, the device size is getting smaller and smaller, and the integration level is getting higher and higher. Moreover, as the feature size of semiconductor devices continues to decrease due to the smaller and smaller device sizes, the traditional planar semiconductor manufacturing technology has become unusable. At present, fin field effect transistors are widely used in the field of small sizes. [0003] In the manufacturing method of the fin field effect transistor structure according to the prior art, the process steps are relatively complicated, and sometimes it is difficult to control the width of the fins and the interval between the fins. [0004] Therefore, it is desired to provide ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/78H01L21/336H01L29/16
CPCH01L29/785H01L29/16H01L29/66477
Inventor 鲍宇
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap