Novel four-port magnetic storage device

Abstract

Disclosed is a novel four-port magnetic storage device. A four-port magnetic storage device is composed of a top left electrode, a top right electrode, a first left ferromagnetic layer, a second right ferromagnetic layer, an oxide isolation layer, a third ferromagnetic layer, a heavy metal layer, a bottom left electrode and a bottom right electrode sequentially from top to bottom and left to right. A write-in branch and a read-in branch are separated, and reliability can be greatly improved. Furthermore, write-in current can flow through heavy metal with low resistivity instead of flowing through tunnel junction, so that write-in power consumption can be greatly reduced.

Description

technical field [0001] The invention relates to a novel four-terminal magnetic storage device. It belongs to the field of microelectronic devices. Background technique [0002] In recent years, new non-volatile memory technologies, such as spin transfer torque magnetic random access memory (STT-MRAM), phase change random access memory (Phase Change Random Access Memory, PCRAM) and resistive random access memory (Resistive Random Access Memory, RRAM) etc. continue to emerge. Among these new non-volatile memory technologies, STT-MRAM is currently one of the most promising candidates for the next generation of general-purpose memory technologies. The most basic unit of STT-MRAM is Magnetic Tunneling Junction (MTJ), as shown in the attached figure 1 As shown, it is mainly composed of three layers of materials, from top to bottom: ferromagnetic layer 1, oxide isolation layer and ferromagnetic layer 2, and the magnetic field polarization direction of one of the ferromagnetic la...

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Problems solved by technology

[0003] The problems existing in the traditional MTJ based on the STT effect are as follows: (1) Since the write current needs to flow through the MTJ, and the resistance of the MTJ itself is relatively large, the voltage across the MTJ is also relatively large, resulting in large write power consumption; ( 2) The write operation and the read operation use the same current branch, so repeated write or read operations may cause breakdown of the MTJ device, resulting in permanent damage

In addition, when performing a read operation, although the read current is small, it is still possible to change the resistance state of the MTJ itself, causing read disturbance

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