Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Failure testing circuit and method of power device

A technology for failure testing and power devices, which is applied in the field of power electronics and can solve problems such as chip burnout

Active Publication Date: 2015-07-08
ZHUZHOU CRRC TIMES SEMICON CO LTD
View PDF6 Cites 33 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these existing test methods are all destructive tests. Once the IGBT fails, the chip will also be burned during the test.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Failure testing circuit and method of power device
  • Failure testing circuit and method of power device
  • Failure testing circuit and method of power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] figure 1 A schematic diagram of an existing IGBT short-circuit safe working area test circuit is shown.

[0036] Such as figure 1 As shown, the existing IGBT short-circuit safe operating area test circuit includes a capacitor C1, a parasitic inductance L1, diodes D1 and D2, a load inductance L2, a controller Vg, and a resistor R1 connected in series between the controller Vg and the IGBT gate.

[0037] During the test, the controller Vg sends a control signal to turn on the device under test DUT (that is, the IGBT under test). Since capacitor C1 stores extremely high energy, there is a large voltage between its upper and lower plates, so capacitor C1 will discharge through parasitic inductance L1, load inductance L2 and IGBT DUT, and form a large current in the discharge circuit.

[0038] If the performance of the IGBT is reliable, it can withstand high voltage and high current for a period of time; if the IGBT is defective, it will fail during this test. The failure...

Embodiment 2

[0057] Commonly used VDMOS avalanche withstand test circuit such as Figure 5 shown. The circuit includes a load inductance L2 and a freewheeling diode D. Wherein, the load diode L2 is connected between the power supply Vdd and the source of the measured VDMOS. The anode of the freewheeling diode D is connected to the drain of the measured VDMOS, and the cathode is connected to the power supply Vdd.

[0058] During the test, the VDMOS is first turned on, so the load inductance L2 will be charged, and its current rises linearly. After the inductor current rises for a period of time, the VDMOS is disconnected when the inductor current reaches a certain value, and a flyback voltage will be generated on the load inductor L2. The flyback voltage will break down the VDMOS, and then form a loop with the freewheeling diode D to release the inductor charge. At this time, the voltage on VDMOS will be maintained at the breakdown voltage, and its current will gradually decrease from t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a failure testing circuit and method of a power device. The failure testing circuit comprises a first switch, a second switch and a controller. The first switch is connected with the tested device in series, and the first switch and the tested device form a first conducting branch circuit; the second switch is connected with the first conducting branch circuit in parallel; the controller is connected with the first switch and the second switch and used for turning on the first switch and turning off the second switch or turning off the first switch and turning on the second switch according to a detected status signal of the tested device. By means of the failure testing circuit and method, when the tested device fails, a bypass can be switched on in time to dredge current, and therefore it is avoided that the tested device is attacked by large current after failing.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a test circuit and a test method for a power device. Background technique [0002] As a power semiconductor device, the insulated gate bipolar transistor IGBT is a device that can control itself to be turned on and off by an external signal. Therefore, in the fields of high-power electrical, electric power, and electronics, IGBT can act as a switch in the circuit. Through a specific configuration, the IGBT circuit can achieve the effect of changing the direction of the current. [0003] Compared with ordinary electrical switches used in daily life, IGBT has the characteristics of no contact, fast turn-on and turn-off speed, large current capacity and high withstand voltage. The non-contact can make the IGBT have no electric spark and mechanical vibration during the switching process. The switching frequency of IGBT can range from thousands of hertz to several megaher...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 刘国友黄建伟罗海辉覃荣震余伟朱利恒
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com