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C-axis tilt gallium nitride FBAR piezoelectric mass sensor

A quality sensor, gallium nitride piezoelectric technology, applied in the field of quality sensors, can solve the problems of large volume, high quality sensitivity, miniaturization, integration, large sound wave attenuation, etc., and achieve the effect of high quality sensitivity

Inactive Publication Date: 2015-07-08
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The quartz wafer of QCM cannot be made very thin, resulting in low sensitivity and large volume of QCM quality sensor, which cannot realize miniaturization and integration
The mass sensitivity of the SAW mass sensor is limited by the distance between the interdigitated electrodes. It is difficult to further improve the mass sensitivity of the SAW mass sensor by the current photolithography process. In addition, some SAW mass sensors have specific requirements for the device substrate, which is not conducive to the realization of the SAW mass sensor. Miniaturization and Integration
The reported FBAR mass sensor has high mass sensitivity and is easy to miniaturize and integrate, but the technology is not yet mature. In the humid environment and liquid phase environment, the sound wave attenuates greatly in the device, causing the FBAR mass sensor to malfunction. Work
[0004] From the above analysis, it can be seen that the existing piezoelectric mass sensor does not solve the problem of being able to work in a wet or liquid environment while still having high mass sensitivity and miniaturization and integration. The present invention can be used in wet environments and liquids. It is of great significance to detect the extremely small mass in the phase environment and promote the wide application of mass sensors with FBAR structure

Method used

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  • C-axis tilt gallium nitride FBAR piezoelectric mass sensor
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  • C-axis tilt gallium nitride FBAR piezoelectric mass sensor

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with drawings and embodiments.

[0024] combine figure 1 As shown, a c-axis tilted gallium nitride FBAR piezoelectric mass sensor includes a sensitive layer 1, an upper electrode 2, a signal terminal 3, a ground terminal 4, a piezoelectric film 5, an etching hole 6, a lower electrode 7, and a Bragg reflection layer 8 and substrate 9 .

[0025] In this specific embodiment, the gallium nitride substrate 9, on the one hand, is used as a supporting layer of the sensor, and on the other hand, as a semiconductor, the peripheral circuit can be etched to integrate with the piezoelectric mass sensor, and on the upper surface of the gallium nitride substrate 9 Depositing the Bragg reflection layer 8; the Bragg reflection layer 8 is formed by alternately laminating three layers of high acoustic resistance layers and three layers of low acoustic resistance layers. A lower electrode 7 is deposited on the upper su...

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Abstract

The invention provides a c-axis tilt gallium nitride FBAR piezoelectric mass sensor which comprises a sensitive layer, an upper electrode, a signal terminal, an earthing terminal, a c-axis tilt gallium nitride FBAR piezoelectric thin film, etching holes, a lower electrode, a Bragg reflection layer and a substrate. The signal terminal and the earthing terminal are distributed at the top of the c-axis tilt gallium nitride FBAR piezoelectric thin film. The upper electrode is connected with the signal terminal and coated with the sensitive layer. The lower electrode is connected with the earthing terminal through the etching holes formed in the piezoelectric thin film. The lower electrode is arranged on the Bragg reflection layer in a deposition mode. The Bragg reflection layer is arranged on the substrate in a deposition mode. According to the c-axis tilt gallium nitride FBAR piezoelectric mass sensor, the c-axis tilt gallium nitride piezoelectric thin film is adopted for the piezoelectric thin film, certain c-axis inclination angle is preferred, and the mass sensor can normally work under a humidity environment or a liquid phase environment.

Description

technical field [0001] The invention relates to a mass sensor, in particular to a piezoelectric mass sensor. Background technique [0002] In recent years, the research and detection of proteins, microorganisms, nucleic acids, enzyme cells, etc. in the fields of molecular biology, pathology, medical diagnostics, and bacteriology have become a research hotspot. In the process of experimental research, it is necessary to detect their extreme Micromass, which requires mass sensors with mass sensitivity down to the molecular weight level and the ability to work in wet or liquid phase environments. At present, in the detection of protein molecules and DNA, the piezoelectric mass sensor is a relatively effective means. Its mass sensitivity has reached the single molecular weight level, and it meets the requirements for detecting extremely small masses. It has a very wide application in the field of biological mass sensors. prospect. [0003] At present, there are mainly three ty...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01G7/00
Inventor 秦利锋刘海强张金惠任奎丽刘伟周伟马盛林
Owner XIAMEN UNIV
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