Semiconductor device and forming method thereof

Abstract

A semiconductor device and a forming method thereof are provided. The forming method of the semiconductor device comprises the following steps: providing a semiconductor substrate and a dummy gate structure; etching the semiconductor substrate at the two sides of the dummy gate structure to form first grooves; forming first stress layers filling the first grooves; performing etching to remove the dummy gate structure and part of the semiconductor substrate in the thickness direction, and forming a second groove in the semiconductor substrate; forming a second stress layer filling the second groove, wherein the stress type of the second stress layer and the stress type of the first stress layers are opposite, and the top of the second stress layer is lower than the surface of the semiconductor substrate; forming an intrinsic material layer filling the second groove, wherein the intrinsic material layer is disposed on the surface of the second stress layer; and forming a gate structure on the surface of the intrinsic material layer, wherein the gate structure includes a gate dielectric layer and a gate conductive layer. The carrier mobility of the channel region of the semiconductor device is improved, the operating speed of the semiconductor device is optimized, and the electrical performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, carrier mobility enhancement technology has been widely studied and applied. Improving the carrier mobility in the channel region can increase the driving current of semiconductor devices and improve the performance of devices. [0003] In the existing manufacturing process of semiconductor devices, since stress can change the energy gap and carrier mobility of silicon materials, it has become more and more common means to improve the performance of semiconductor devices through stress. Specifically, by properly controlling the stress, the mobility of carriers (electrons in NMOS devices, holes in PMOS devices) can be increased, thereby increasing the driving current, thereby greatly improving the performance of...

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Problems solved by technology

[0005] However, in practical applications, it has been found that the degree of improvement in carrier mobility of semiconductor devices formed by existing technologies is limited, which is not enough to meet the needs of increasing the operating speed of semiconductor devices, and there are problems such as lowering of the drain induction barrier and leakage current.

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