Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming mems acceleration sensor

A dielectric layer and substrate technology, applied in the direction of measuring acceleration, velocity/acceleration/impact measurement, instruments, etc., can solve the problems of etchant residue, affecting the performance of acceleration sensor, and cannot be removed cleanly, so as to achieve the effect of improving performance

Active Publication Date: 2019-07-02
SEMICON MFG INT (SHANGHAI) CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Use wet etching to remove the polymer. The polymer can be cleaned, but the etchant will form residue after entering the cavity, which cannot be removed. The residual etchant will affect the subsequent process and the performance of the acceleration sensor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming mems acceleration sensor
  • Method for forming mems acceleration sensor
  • Method for forming mems acceleration sensor

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0053] refer to Figure 5 , a substrate 100 is provided, and a control circuit (not shown in the figure) is formed on the substrate 100 . The control circuit is used for receiving electrical signals and converting the electrical signals into inertial force, which is also called acceleration force, which refers to the force acting on the object during the acceleration process.

[0054] In a specific embodiment, the control circuit includes device structures such as transistors. The substrate 100 may be a silicon substrate, a germanium substrate, a silicon-on-insulator substrate, etc.; or the material of the substrate 100 may also include other materials, such as group III-V compounds such as gallium arsenide. Those skilled in the art can select the substrate as required, so the type of the substrate should not limit the protection scope of the present invention.

[0055] refer to Image 6 , a first dielectric layer 101 is formed on the substrate 100, the first dielectric lay...

no. 2 example

[0079] refer to Figure 12 , forming a second dielectric layer 302 on the first dielectric layer 301, the second dielectric layer 302 covering the first dielectric layer 301 and the lower plate 304;

[0080] refer to Figure 13 , the first dielectric layer 301 is patterned to form a groove 309, the groove 304 defines the position of the cavity, and the groove 309 exposes the lower plate 304;

[0081] refer to Figure 14 , in groove 309 (cf. Figure 13), an etch stop layer 310 and a third dielectric layer 303 on the etch stop layer 310 are formed, the etch stop layer 310 covers the bottom and sidewalls of the trench, and the third dielectric layer 303 fills the trench. The etching barrier layer 310 is used to protect the lower electrode plate 304 and prevent the lower electrode plate 304 from being damaged in the subsequent process of forming the cavity.

[0082] In a specific embodiment, the materials of the first dielectric layer 301 , the second dielectric layer 302 and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a forming method of an MEMS (microelectronic mechanical system) sensor. The method comprises the steps: providing a substrate; forming a first medium layer on the substrate, and forming a lower polar plate on the first medium layer; forming a second medium layer on a first medium layer; forming a conducting material layer on the second medium layer; carrying out graphic treatment on the conducting material layer to form an inertial electrode and a fixed electrode, wherein the inertial electrode is provided with a plurality of first comb-shaped pieces, the fixed electrode is provided with a plurality of second comb-shaped pieces, partial or all first comb-shaped pieces are opposite in the direction perpendicular to the upper surface of the substrate, one second comb-shaped piece is arranged between two adjacent first comb-shaped pieces, and one first comb-shaped piece is arranged between two adjacent second comb-shaped pieces; forming a cavity in the second medium layer of a partial thickness below the plurality of first comb-shaped pieces and second comb-shaped pieces, wherein a gaseous etching agent and a volatile carrier are used in the cavity forming process, and the gaseous polymer generated in the cavity forming process is discharged along with the volatile carrier. According to the technical scheme, the performance of the MEMS acceleration sensor can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a MEMS acceleration sensor. Background technique [0002] MEMS accelerometer is a kind of MEMS device, which receives the inertial force from the outside through the inertial electrode (the inertial force refers to the inertia of the object when the object accelerates, so that the object has the tendency to maintain the original state of motion, and if the Taking the object as the reference system and establishing a coordinate system on the reference system, it seems as if a force in the opposite direction acts on the object to cause the object to displace in the coordinate system, so it is called inertial force), The inertial electrode moves relative to the fixed electrode, and the relative movement causes electrical signal changes, which are transmitted to the control circuit. The electrical signal is processed by the control circuit and converted in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01P15/125B81C1/00
Inventor 刘国安吴萍徐伟刘煊杰
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com