Ethanol sensitive material and semiconductor ethanol sensor

An alcohol sensor and sensitive material technology, which is applied in the field of gas detection, can solve the problems of low response sensitivity, high price, poor ethanol detection selectivity, etc., and achieves the effects of high integration, simple structure, and improved sensitivity and selectivity.

Active Publication Date: 2015-06-03
NANJING YIDEGUAN ELECTRONICS TECH
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

Most of the existing alcohol sensors are fuel cell type, although they have high precision, they are expensive
Semiconductor alcohol sensors based on intrinsic metal oxides generally have low response sensitivity to reducing gases, and it is particularly important that metal oxide sensors are sensitive to most reducing gases, so the selectivity to ethanol detection is poor

Method used

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  • Ethanol sensitive material and semiconductor ethanol sensor
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Embodiment Construction

[0027] The technical scheme of the present invention is described in detail below in conjunction with accompanying drawing:

[0028] The inventive idea of ​​the present invention is to change the semiconductor properties of divalent and tetravalent oxide semiconductors by doping the surface of high-valent oxide semiconductors, reduce the metal oxide grain boundary barrier, increase the conductance, and improve the sensitivity of materials and the selection of gases properties, while reducing the reaction temperature of the material and the gas. Specifically, the present invention prepares an alcohol-sensitive material by doping zinc oxide, tin oxide or a mixture of the two with niobium pentoxide or / and titanium dioxide, and its sensitivity to alcohol is compared with that of the existing metal oxide sensor The material can be improved by an order of magnitude, while the selective sensitivity to other volatile organic gases is increased by 5 times, and the reaction temperature ...

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Abstract

The invention discloses an ethanol sensitive material and a semiconductor ethanol sensor, and belongs to the technical field of gas detection. The ethanol sensitive material is niobium pentoxide or / and titanium dioxide doped zinc oxide or niobium pentoxide and / or titanium dioxide doped tin oxide or a mixture of the niobium pentoxide or / and titanium dioxide doped zinc oxide / tin oxide. The semiconductor ethanol sensor comprises a heating and detecting part and a sensitive layer made from the ethanol sensitive material. The ethanol sensitive material, by doping niobium pentoxide or / and titanium dioxide in zinc oxide, tin oxide or the mixture thereof, can improve the sensitivity of a metallic oxide sensing material to ethanol by an order of magnitude and the sensitivity to other volatilizable organic gas by 5 times, and the reaction temperature is reduced. The semiconductor ethanol sensor disclosed by the invention has the advantages of simple structure and high integration degree, and the semiconductor ethanol sensor can be prepared by adopting various mature semiconductor technologies.

Description

technical field [0001] The invention relates to an alcohol-sensitive material and a semiconductor alcohol sensor based on the alcohol-sensitive material, belonging to the technical field of gas detection. Background technique [0002] High-precision alcohol detection and monitoring has extremely wide applications in industrial applications and traffic management. In the actual work of the traffic control department, the breath alcohol content test is usually used to judge whether the driver has drunk driving behavior. The breath alcohol tester uses an alcohol sensor to measure the alcohol content in the person's exhaled breath. Commonly used alcohol sensors include semiconductor type and fuel cell type. Existing alcohol sensors are mostly of fuel cell type, although they have high precision, they are expensive. Semiconductor alcohol sensors based on intrinsic metal oxides generally have low response sensitivity to reducing gases. It is particularly important that metal oxi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/26
Inventor 章伟李雨桐秦薇薇李涛
Owner NANJING YIDEGUAN ELECTRONICS TECH
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