Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Copper-doped Ge‑Ga‑S chalcogenide glass and method for preparing same

A chalcogenide glass, ge-ga-s technology, applied in the field of chalcogenide glass, can solve the problems of low refractive index, complex preparation of chalcogenide glass, high precision optical path adjustment, etc., and achieve good third-order nonlinear performance , the effect of good near-infrared transmission characteristics

Active Publication Date: 2018-04-17
NINGBO UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, at present, the preparation of chalcogenide glass is relatively complicated, and the test conditions for accurate measurement of infrared nonlinear characteristics of materials are relatively high (requiring high stability of infrared femtosecond pulsed laser light source) and the comparison of high-precision optical path adjustment of infrared invisible laser Due to the constraints of difficult and other constraints, there are few studies on the third-order nonlinearity of chalcogenide glass in the infrared communication band, and according to the existing research results, the third-order nonlinear refractive index of chalcogenide glass is currently low, which is difficult to meet Usage requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Copper-doped Ge‑Ga‑S chalcogenide glass and method for preparing same
  • Copper-doped Ge‑Ga‑S chalcogenide glass and method for preparing same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0019] The preparation method of the copper-doped Ge-Ga-S chalcogenide glass of each embodiment comprises the following steps:

[0020] 1) Ingredients and vacuuming: Prepare various raw materials according to the ratio and mix them evenly, then put the mixed raw materials into the quartz tube and vacuumize to 10 -5 Pa, then the raw material is packaged in a closed quartz tube;

[0021] 2) High-temperature melting and quenching: put the quartz tube packaged with raw materials into a heating furnace for high-temperature melting, the heating temperature is 950 ° C, and the heating time is 25 hours. After the heating is completed, a melt is obtained in the quartz tube, and then the quartz tube is immersed in Quench the encapsulated melt in distilled water at 10°C, take it out immediately after the wall is removed, and obtain a semi-finished product of copper-doped Ge-Ga-S chalcogenide glass in the quartz tube;

[0022] 3) Annealing and cooling: anneal the semi-finished copper-dop...

Embodiment 2

[0024] The absorption spectrum of the copper-doped Ge-Ga-S chalcogenide glass of embodiment 2 is shown in figure 1 . From figure 1 It can be seen that in the near-infrared band, its absorption is very small, and it has good near-infrared transmission characteristics.

[0025] Table 1 Raw material ratio and properties of glass in Examples 1-4 and Comparative Examples 1-2

[0026]

[0027] It can be seen from Table 1 that the copper-doped Ge-Ga-S chalcogenide glass of the present invention, as the Cu content increases, the ΔT of the glass sample increases gradually, indicating that the introduction of Cu ions can improve the anti-devitrification ability of the sample , it can be seen from the measured hardness data that the hardness of the sample also increases with the increase of Cu content. The third-order nonlinear refractive index of the copper-doped Ge-Ga-S chalcogenide glass of the present invention is higher than that of the As-containing chalcogenide glass, and th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
Login to View More

Abstract

The invention proposes a copper-doped Ge-Ga-S chalcogenide glass and a preparation method thereof based on a chalcogenide glass control model and glass structure dynamics research. The composition formula of the copper-doped Ge-Ga-S chalcogenide glass of the present invention is (1-a)GexGaySz-aCu, wherein x, y, z and a represent the mole fractions of Ge, Ga, S and Cu respectively, and 1≤x ≤40, 1≤y≤20, 40≤z≤98, 0<a<1, Cu is introduced in the form of copper-containing compounds, and its third-order nonlinear refractive index n2 can reach up to 1.48×10-17m2 / W, high Compared with As-containing chalcogenide glass, it has good third-order nonlinear performance and good near-infrared transmission characteristics.

Description

technical field [0001] The invention relates to a chalcogenide glass, in particular to a copper-doped Ge-Ga-S chalcogenide glass and a preparation method thereof. Background technique [0002] At present, most of the chalcogenide glasses with higher third-order nonlinear properties commercially available in the world are those containing As, such as "Testing of third-order nonlinear systems of chalcogenide glasses" published by "Optical Materials Letters" (Wang T , Gai X, WeiW, Wang R, Yang Z, Shen X, Madden S, Luther-Davies B 2014 Optical Materials Express.4 1011) reported that the chalcogenide glass As 2 S 3 The third-order nonlinear refractive index at 1550nm wavelength is 2.85×10 - 18 m 2 / W, the quality factor is greater than 20. [0003] However, As is highly toxic to the human body and causes certain pollution to the environment. Therefore, the development of As-free, environmentally friendly alternative materials with high third-order nonlinear performance has b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C03C3/32
Inventor 陈飞飞乔北京黄益聪聂秋华戴世勋
Owner NINGBO UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products