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Non-destructive readout ferroelectric memory and methods of making and operating the same

A non-destructive readout and ferroelectric memory technology, which is applied in the preparation of ferroelectric memory and the field of ferroelectric memory, can solve the problems of reduced device reliability, reduced ferroelectric capacitor C ratio, and low storage density, achieving low cost , Conducive to small size, simple preparation effect

Active Publication Date: 2017-11-17
FUDAN UNIV
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Problems solved by technology

[0007] Therefore, the destructive readout (DRO) ferroelectric memory currently commercially used is mainly read out by charge integration to the ferroelectric capacitor. As summarized above, it has the disadvantage of destructive readout. Rewriting data, which is accompanied by a large number of erasing and rewriting operations, reduces the reliability of the device and affects the data reading speed; and, this reading principle limits the scaling down of the ferroelectric capacitor C, and the storage Low density, for example, the maximum ferroelectric memory in commercial application is only 8MB

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  • Non-destructive readout ferroelectric memory and methods of making and operating the same

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Embodiment Construction

[0057] The following introduces some of the possible embodiments of the present invention, which are intended to provide a basic understanding of the present invention, but are not intended to identify key or decisive elements of the present invention or limit the scope of protection.

[0058] In the drawings, for the sake of clarity, the thicknesses of layers and regions are exaggerated, and the dimensional proportional relationship among the various parts in the illustration does not reflect the actual dimensional proportional relationship.

[0059] In the following embodiments, for clarity of description, the domain direction or polarization direction is exemplarily given, but it should be understood that the domain direction or polarization direction of the ferroelectric memory is not limited to the embodiment shown in the figure. out direction.

[0060] figure 1 Shown is a schematic cross-sectional structure diagram of a non-destructive readout ferroelectric memory accor...

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Abstract

The invention belongs to the technical field of ferroelectric storage, in particular to a non-destructive readout ferroelectric storage and its preparation method and operation method. The non-destructive readout ferroelectric memory comprises a first electrode layer, a second electrode layer and a ferroelectric thin film layer arranged between the first electrode layer and the second electrode layer, wherein the first electrode layer is provided with a The gap divided into at least two parts, the polarization direction of the electric domain of the ferroelectric thin film layer is not substantially perpendicular and not parallel to the normal direction of the first electrode layer; wherein, the two adjacent gaps in the first electrode layer When a read signal in a certain direction is biased between the parts, the electric domains of the part of the ferroelectric film layer corresponding to the gap are partially reversed to establish a domain wall conduction channel. The ferroelectric memory of the invention can realize the non-destructive readout of current mode, is suitable for high-density application, and has simple preparation and low cost.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage, in particular to a non-destructive readout ferroelectric memory, in particular to a ferroelectric memory for non-destructive readout based on electrodes with gaps and the preparation method and operation of the ferroelectric memory method. Background technique [0002] FRAM (Ferroelectric Random Access Memory) uses two different polarization orientations of ferroelectric domains (or "electric domains") in the electric field as logic information ("0" or "1") to store data Non-volatile memory (Non-volatile Memory), which may also be called "ferroelectric memory". [0003] The storage medium layer of ferroelectric memory is a ferroelectric thin film layer with reversible (or "flip") ferroelectric domains. At present, the fastest speed of domain inversion that can be measured in the laboratory can reach 0.2 ns, it can actually be faster. Generally, the domain inversion speed determin...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11507G11C11/22H10B53/30H10B69/00
Inventor 江安全耿文平江钧
Owner FUDAN UNIV
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