A method and device for generating full-entropy random numbers based on flash memory

Abstract

The invention discloses a method and device for generating full-entropy random numbers based on a flash memory. Through the tunnel oxidation layer thickness determined by different production processes of the flash memory which mainly refers to a Nand Flash chip, the physical organization structures of storage units and the random electronic noise generated in the programming and erasure operation processes of the storage units, the parameters of the specific storage units are changed during programming or erasure operation, data are extracted through a partial programming method or a partial erasure method or an overprogram method, and the data are used as the random numbers to be output after being processed. All the extracted random numbers have the full-entropy property through experimental verification. By the adoption of the method and device, the random numbers capable of meeting certain requirements can be generated without special circuit design, and the using condition and the cost of a random number generator can be lowered.

Description

Technical field [0001] The invention belongs to the technical field of random number generation, and in particular relates to a method and device for generating full entropy random numbers based on flash memory. Background technique [0002] With the development of the network, there are higher requirements for secure communication technology, and the importance of encryption technology is increasing day by day. Since random numbers are the core of most cryptographic technologies, a device capable of generating true random numbers is particularly needed to generate truly unpredictable random numbers. [0003] Although the pseudo-random number generators in most mathematics libraries can generate pseudo-random number sequences with good statistical characteristics, these software runs on computers with certainty, so they are not really unpredictable. True randomness requires the use of some hardware devices, such as diodes, radioactive samples, etc. Because of electronic noise or u...

AI Technical Summary

Problems solved by technology

With the improvement of the Nor Flash production process, the unit area of ​​the storage unit is gradually reduced. The difference in the production process of different Nor Flash chips makes the thickness of the tunnel oxide layer of each storage unit slightly different, resulting in random electronic noise affecting the Nor Flash storage unit. The impact of the erase time of the memory cell is increased and varied, that is, the number of partial erase times required for the completion of each memory cell erase is random

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