Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polycrystalline silicon production method and equipment based on improved Siemens method

A production method, the technology of the Siemens method, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of high production cost of polysilicon, affecting the primary conversion rate of trichlorosilane, and low purity of trichlorosilane, etc. Reach the effect of reducing production cost, improving primary conversion rate and improving purity

Active Publication Date: 2015-04-29
XINJIANG DAQO NEW ENERGY
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the embodiment of the present invention provides a polysilicon production method and polysilicon production equipment based on the improved Siemens method, the main purpose of which is to solve the problem that the purity of trichlorosilane participating in the reduction reaction is low, thereby affecting the primary conversion rate of trichlorosilane, Problems leading to high production cost of polysilicon

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polycrystalline silicon production method and equipment based on improved Siemens method
  • Polycrystalline silicon production method and equipment based on improved Siemens method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The present invention will be described in further detail below in conjunction with specific examples, but not as a limitation of the present invention.

[0039] Such as figure 1 As shown, the embodiment of the present invention provides a polysilicon production method based on the improved Siemens method, comprising the following steps:

[0040] Step 1, trichlorosilane in H 2 Polysilicon is obtained by reducing and depositing in a reduction furnace in an atmosphere, and the reduction furnace exhausts tail gas; the composition of the tail gas is H 2 , HCl, dichlorodihydrosilane, trichlorosilane, chlorosilane.

[0041] Step 2, the tail gas in step 1 is multi-stage condensed to obtain non-condensable gas and condensate, the non-condensable gas enters the absorption tower, the absorption tower absorbs the HCL in the non-condensable gas and flows out of the chlorosilane-rich liquid; the condensate is mixed with the chlorosilane-rich liquid After entering the analysis tow...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a polycrystalline silicon production method and polycrystalline silicon production equipment based on improved Siemens method, and belongs to the technical field of polycrystalline silicon production. The problems that the purity of trichlorosilane participating in a reduction reaction is low and first-time conversion rate of trichlorosilane is influenced to cause high production cost of the polycrystalline silicon are solved. According to the technical scheme, the polycrystalline silicon production method comprises the following steps: step 1, performing reduction and deposition on trichlorosilane to acquire polycrystalline silicon and exhausting tail gas; step 2, performing multilevel condensation on the tail gas to acquire non-condensable gas and condensate liquid, introducing the non-condensable gas into an absorption tower, absorbing HCL in the non-condensable gas and enabling a chlorosilane pregnant solution to flow out; after mixing the condensate liquid with the chlorosilane pregnant solution, enabling the condensate liquid to flow into an analyzing tower; step 3, performing a disproportionation reaction on at least a portion of chlorosilane barren liquid flowing out of the analyzing tower, so that the mass percentage content of dichlorosilane in the chlorosilane barren liquid is reduced; step 4, enabling the chlorosilane barren liquid after reaction to flow into a rectifying tower and pouring a product acquired in the rectifying tower into a reduction furnace.

Description

technical field [0001] The invention belongs to the technical field of polysilicon production, and in particular relates to a polysilicon production method based on an improved Siemens method and a polysilicon production equipment. Background technique [0002] Polysilicon is a form of elemental silicon. When molten elemental silicon is solidified under supercooled conditions, silicon atoms are arranged in the form of diamond lattices to form many crystal nuclei. If these crystal nuclei grow into crystal grains with different crystal plane orientations, these crystal grains combine to crystallize into polycrystalline silicon. . [0003] The production technologies of polysilicon are mainly improved Siemens method and silane method. The Siemens method produces columnar polysilicon by vapor deposition. In order to improve the utilization rate of raw materials and be environmentally friendly, a closed-loop production process, namely the improved Siemens method, is adopted on ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035
Inventor 王西玉
Owner XINJIANG DAQO NEW ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products