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Control of Impedance of RF Delivery Path

A radio frequency and path technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve problems such as uneven etching and reduced wafer output

Active Publication Date: 2015-04-15
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Etching non-uniformity results in M-shaped etching or W-shaped etching of the wafer
Inhomogeneity in etch or deposition leads to reduced wafer yield

Method used

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  • Control of Impedance of RF Delivery Path
  • Control of Impedance of RF Delivery Path
  • Control of Impedance of RF Delivery Path

Examples

Experimental program
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Embodiment Construction

[0033] The following embodiments describe systems and methods for controlling the impedance of a radio frequency (RF) delivery path. It will be apparent that embodiments of the invention may be practiced without some or all of these specific details. In other instances, well known method operations have not been described in detail in order not to unnecessarily obscure the embodiments of the invention.

[0034] figure 1 is an embodiment of a graph 100 for illustrating the inhomogeneity of the normalized voltage in the higher order harmonics of a 60 MHz signal. The higher order harmonics create a standing wave voltage in the plasma, and the standing wave voltage causes non-uniformity in etching the substrate or depositing material on the substrate.

[0035] In various embodiments, the higher order harmonics are third or higher order harmonics. In some embodiments, the higher order harmonics are second or higher order harmonics.

[0036]Graph 100 illustrates a graph of the n...

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PUM

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Abstract

A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

Description

technical field [0001] Embodiments of the invention relate to controlling the impedance of a radio frequency (RF) delivery path. Background technique [0002] A plasma-based system includes a supply for generating a signal. The plasma-based system further includes a chamber that receives the signal to generate the plasma. Plasmas are used for a variety of operations, including cleaning wafers, depositing oxides and films on wafers, and etching away a portion of a wafer or a portion of oxides and films. [0003] It is difficult to control some properties of the plasma, such as standing waves in the plasma, etc., so that the uniformity of plasma etching or deposition can be controlled. Difficulties in controlling plasma performance lead to non-uniformity in the material etched or deposited on the wafer. For example, the wafer is etched more at a first location from its center than at a second location from the center. The second distance is farther from the center than the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01J37/244
CPCH01J37/32183H01J37/244H01J37/32431H01J37/32623H01J37/32807H01J37/32908H01J37/32174H01J37/32449H01J37/32532H01J2237/3323H01J2237/3344
Inventor 阿列克谢·马拉霍塔诺夫拉金德尔·迪恩赛肯·卢彻斯卢克·奥巴伦德
Owner LAM RES CORP
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