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Gas supply device and method for cooling static sucker

A technology of electrostatic chuck and gas supply device, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc. It can solve problems such as leakage, changes in reaction conditions, inconsistent effects between the center and edge areas of the substrate 30, and achieve good temperature distribution. Effect, small fluctuation, effect of ensuring heat transfer and cooling effect

Active Publication Date: 2015-03-25
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the helium 60 leaks at the edge of the substrate 30 and mixes with the process gas 40 (reference number 70 is a gas mixing area), so that the reaction conditions at the edge of the substrate 30 are changed, resulting in the substrate 30 Inconsistent effects after the center and edge areas are made

Method used

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  • Gas supply device and method for cooling static sucker
  • Gas supply device and method for cooling static sucker
  • Gas supply device and method for cooling static sucker

Examples

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Embodiment Construction

[0040] like figure 2 , Figure 4As shown, the bottom of the vacuum processing chamber 1 is provided with an electrostatic chuck 2 with a diameter equal to or greater than that of the substrate 3 for fixing and supporting the substrate 3 placed thereon. The first process gas 40 is introduced into the vacuum processing chamber 1 from above to perform etching or other processing on the surface of the substrate 3 . One path of second process gas 80 or 80' replaces or partially replaces helium as cooling gas, and transports it to the gap between the back surface of the substrate 3 and the top surface of the electrostatic chuck 2 through the corresponding gas channel opened in the electrostatic chuck 2, and Sheet 3 undergoes heat transfer cooling. Use a gas with the same or very close composition as the first process gas 40 as the second process gas 80 or 80', thereby effectively avoiding the problem of changing the reaction conditions at the edge of the substrate 3 due to the mi...

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PUM

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Abstract

The invention relates to a gas supply device and method for a cooling static sucker. Reaction gas with first pressure is changed into first process gas with second pressure through a flow divider in a first gas path and the first process gas is delivered to a substrate placed on the static sucker for reaction treatment; a second branch gas path is communicated with a pipeline in front of the flow divider, a path of reaction gas is divided or the reaction gas is mixed with diluent gas so as to form second process gas with first pressure, the second process gas is delivered to the edge of the back face of the substrate through gas channels on the edge in the static sucker, helium or the second process gas is delivered to the center of the surface of the substrate through the gas channels in the center, and therefore the heat transfer cooling effect is achieved. Due to the fact that the composition of the first process gas and the composition of the second process gas are the same or are quite similar, reaction conditions needed for substrate edge treatment are fundamentally not changed when the first process gas and the second process gas are mixed; the high-pressure second process gas is large in pressure supply range, the defect that heat conduction efficiency is lower than that of helium can be effectively overcome, and the cooling effect is guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an air supply device and an air supply method for cooling an electrostatic chuck. Background technique [0002] like figure 1 Shown is a schematic structural view of a conventional vacuum processing chamber 10 . The process gas 40 enters the vacuum processing chamber 10 from the top to perform etching, film deposition or other processing on the surface of the substrate 30 . The bottom of the vacuum processing chamber 10 is provided with an electrostatic chuck 20 for fixing and supporting the substrate 30 placed on the electrostatic chuck 20 during processing. As a cooling gas, helium 60 first passes through several gas channels 50 opened in the electrostatic chuck 20, passes through the electrostatic chuck 20 from below to reach its top surface, and then flows through the gap between the back surface of the substrate 30 and the top surface of the electrostatic chuck 2...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/683
CPCH01L21/67H01L21/6831H01L21/6833
Inventor 万磊倪图强
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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