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Piezoelectric-modulation vertical cavity semiconductor laser structure

A vertical cavity, semiconductor technology, applied in semiconductor lasers, lasers, devices for controlling laser output parameters, etc., can solve problems such as single modulation mode

Inactive Publication Date: 2015-02-25
BEIJING UNIV OF TECH
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Problems solved by technology

[0002] At present, the modulation of the output power of the vertical cavity semiconductor laser is mainly realized by changing the applied current, and the modulation method is single

Method used

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  • Piezoelectric-modulation vertical cavity semiconductor laser structure

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Embodiment Construction

[0052] The structure of the piezoelectric modulation vertical cavity semiconductor laser used in the present invention is: the MOCVD (metal organic chemical vapor deposition) epitaxial growth method is adopted. Such as figure 1 Shown:

[0053]In n-GaAs(100)(Si:2x10) with a width of 250um 18 / cm 2 ) grow n-GaAs (Si: 2x10 18 / cm 2 ) buffer layer 2;

[0054] In n-GaAs (Si:2x10 18 / cm 2 ) on the buffer layer 2 grows 20 pairs of λ / 4 periodically repeated Al 0.9 Ga 0.1 As(81.7nm) / GaAs(69.6nm)(Si:2x10 18 / cm 2 ), forming an n-type DBR reflector 3;

[0055] Growth of n-Al with a thickness of 72.3 nm on the n-type mirror 3 0.2 Ga 0.8 As(Si:1×10 18 / cm 3 ) lower carrier confinement layer 4;

[0056] Gain region 5 with 3 quantum wells is grown on carrier lower confinement layer 4 (well material is In 0.2 Ga 0.8 As thickness is 8nm, barrier material is GaAs thickness is 10nm);

[0057] Growth of p-Al with a thickness of 72.3nm on the gain region 5 0.2 Ga 0.8 As(C:1×10...

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Abstract

The invention provides a piezoelectric-modulation vertical cavity semiconductor laser structure comprising a single crystal substrate (1), a buffering layer (2), an n-type DBR reflecting mirror (3), a carrier lower limiting layer (4), a gain region (5), a carrier upper limiting layer (6), a photoelectric limiting layer (7), a p-type DBR reflecting mirror (8), an ohmic electrode contact layer (9), a first transparent electrode (10), two second metal layers (11), an SiO2 antireflection film (12), two SiN insulation layers (13), a second transparent electrode (14), two third metal layers (15) and a first metal layer (16). During powering operation, the cavity of a vertical cavity semiconductor laser deforms to different extents through the piezoelectric characteristics of the SiO2 antireflection film, and the piezoelectric-modulation of the output power of the vertical cavity semiconductor laser can be implemented.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser devices, in particular to a piezoelectric modulation vertical cavity semiconductor laser structure. Background technique [0002] At present, the modulation of the output power of the vertical cavity semiconductor laser is mainly realized by changing the applied current, and the modulation method is single. Usually, the output end facet of the vertical cavity semiconductor laser needs to be plated with SiO 2 Anti-reflection coating to improve the micromolecular efficiency and enhance the light transmittance, while SiO 2 It is a material with piezoelectric properties. Therefore, the anti-reflection coating SiO can be used 2 The piezoelectric characteristics of the laser make the cavity of the laser change from a planar stable cavity to a non-planar unstable cavity, thereby realizing the modulation of the output power of the vertical cavity semiconductor laser. [0003] Piezoelectric...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/06H01S5/10
Inventor 王智勇吕朝蕙李军尧舜邱运涛贾冠男高祥宇雷宇鑫
Owner BEIJING UNIV OF TECH
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