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Terahertz multifunctional devices based on integrated technology

A multi-functional and technical technology, applied in the terahertz field, which can solve the problems of high cost, internal transmission loss and high processing complexity.

Active Publication Date: 2017-08-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Design and process each terahertz device separately, the design and processing complexity is relatively large, multiple dielectric substrates and cavities are required, the cost is high and there is unnecessary internal transmission loss

Method used

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  • Terahertz multifunctional devices based on integrated technology
  • Terahertz multifunctional devices based on integrated technology
  • Terahertz multifunctional devices based on integrated technology

Examples

Experimental program
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Embodiment 1

[0041] Such as Figure 1 to Figure 6 shown.

[0042] The terahertz multifunctional device based on integrated technology includes a dielectric substrate 10 arranged in the air cavity 11. In the direction from left to right, the dielectric substrate 10 is provided with a microstrip line short-circuit surface 2, which is sequentially connected by a microstrip line, Four-tube frequency multiplier diode 3, local oscillator matching circuit 4, frequency mixing diode 5, radio frequency matching circuit 6, intermediate frequency low-pass filter 8; also includes the area where the input fundamental waveguide microstrip transition 1 and the microstrip line short-circuit surface 2 are located The air cavity 11 and the dielectric substrate 10 in the area where the microstrip line short-circuit surface 2 is located all extend into the input fundamental waveguide microstrip transition 1, and also include the input radio frequency waveguide microstrip transition 7, the input radio frequency...

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Abstract

The invention discloses a terahertz multifunctional device based on integrated technology, including a terahertz frequency doubler and a terahertz harmonic mixer. Its structure from left to right is: input fundamental waveguide microstrip transition, microstrip line short-circuit surface, four-tube frequency-multiplier diode, local oscillator matching circuit, mixing diode, RF matching circuit, input RF waveguide microstrip transition, IF low pass filter. The number of dielectric substrates is reduced so that the circuit is integrated on one substrate, which also reduces the number of cavities to be processed and makes the processing and assembly simple. On the other hand, the invention reduces the design and processing of waveguide transitions and reduces the cavity size. size.

Description

technical field [0001] The present invention relates to the technical field of terahertz, and specifically refers to a terahertz multifunctional device based on integrated technology. Background technique [0002] Terahertz devices are an important part of terahertz technology, and they are carriers for propagating terahertz waves to realize terahertz systems, especially terahertz frequency conversion devices are the most important thing in the development of terahertz technology. Since it is very difficult to design and study a stable local oscillator source in the terahertz frequency band, it is of great practical significance to apply a low-frequency power source to the terahertz frequency band by using a frequency conversion circuit. Most of the currently studied terahertz circuit devices are single devices, which can only achieve a single function of frequency multiplication or frequency mixing, and are cascaded or paralleled on the basis of a single device to realize a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P5/16H03D7/16
Inventor 张波纪东峰刘戈司梦姣杨益林蒙泽祖樊勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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