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Method for preparing LED (light-emitting diode) broadband gradient fluorescent film by chemical solution coating

A chemical solution, gradient fluorescence technology, applied in chemical instruments and methods, liquid chemical plating, liquid phase epitaxial layer growth, etc., can solve the problems of non-uniform color temperature, difficult to reproduce and so on

Inactive Publication Date: 2015-02-18
HUNAN SCI & TECH RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These problems may cause LEDs to have non-uniform color temperature and the same batch of white LEDs is difficult to reproduce and maintain the same performance

Method used

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  • Method for preparing LED (light-emitting diode) broadband gradient fluorescent film by chemical solution coating
  • Method for preparing LED (light-emitting diode) broadband gradient fluorescent film by chemical solution coating
  • Method for preparing LED (light-emitting diode) broadband gradient fluorescent film by chemical solution coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Example 1: Preparation of broadband gradient YAG fluorescent single crystal thin film by sol-gel method

[0045] 1.1YAG:Ce 3+ Preparation of sol: This step is to prepare the composition Y separately 2.94 al 2.5 Ga 2.5 o 12 : Ce 0.06 greenish fluorescent film, yellow Y 2.94 al 5 o 12 : Ce 0.06 and reddish Y 2.74 al 5 o 12 : Ce 0.06 +Gd 0.2Precursor sols for fluorescent thin films. Then, the three kinds of sols are used for epitaxial production in different combinations to form a broad-band gradient fluorescent single crystal thin film.

[0046] 1.2. Preparation of YAG:Ce by sol-gel method 3+ fluorescent film. Use metal alkoxides whose raw materials are Y, Al, Ga, Ce and Gd such as: Y(OC 3 h 7 ) 3 ,Al(OC 3 h 7 ) 3 ,Ga(OC 3 h 7 ) 3 , Ce(OC 3 h 7 ) 3 ,Gd(OC 3 h 7 ) 3 and absolute ethanol (EtOH, analytical grade); N, N-dimethylformamide (DMF, analytical grade); concentrated hydrochloric acid (analytical grade), deionized water.

[0047] The pr...

Embodiment 2

[0049] Example 2: Preparation of broadband gradient BSS fluorescent single crystal thin film by sol-gel method

[0050] 2.1 Raw materials: Analytical pure Ba, Sr, Si, Eu metal alkoxides such as: Ba(OC 3 h 7 ) 2 ,Sr(OC 3 h 7 ) 2 ,Si(OC 2 h 5 ) 2 ,Eu(OC 3 h 7 ) 3 , absolute ethanol (EtOH, analytical grade); N, N-dimethylformamide (DMF, analytical grade); concentrated hydrochloric acid (analytic grade), deionized water.

[0051] 2.2BSS:Eu 3+ Preparation of sol: This step is to prepare the composition as Ba 1.8 Sr 0.2 SiO 4 :Eu 0.06 Greenish fluorescent film, yellow Ba 0.5 Sr 1.5 SiO 4 :Eu 0.06 and reddish Ba 0.1 Sr 1.9 SiO 4 :Eu 0.2 Precursor sols for fluorescent thin films. Then, the three kinds of sols are used for epitaxial production in different combinations to form a broad-band gradient fluorescent single crystal thin film.

[0052] First put Ba, Sr, Si, Eu metal alkoxides such as: Ba(OC 3 h 7 ) 2 ,Sr(OC 3 h 7 ) 2 ,Si(OC 2 h 5 ) 2 ,Eu(OC 3...

Embodiment 3

[0054] Example 3: Preparation of Broadband Gradient YAG Fluorescent Single Crystal Thin Film by Organic Compound Decomposition Method

[0055] 3.1YAG:Ce 3+ Preparation of organic compound precursors: this step is to prepare the composition Y 2.94 al 2.5 Ga 2.5 o 12 : Ce 0.06 greenish fluorescent film, yellow Y 2.94 al 5 o 12 : Ce 0.06 and reddish Y 2.74 al 5 o 12 : Ce 0.06 +Gd 0.2 Precursor solution for fluorescent thin films. Then, the three kinds of solution gels with different compositions are used for epitaxial production according to different combination sequences to form a broad-band gradient fluorescent single crystal thin film.

[0056] 3.2 Preparation of YAG:Ce by decomposition of organic compounds 3+ fluorescent film. Use raw materials as Y, Al, Ga, Ce, organic compounds such as Gd: yttrium 2-ethylhexanoate [Y(C 7 h 15 COO) 3 ], aluminum 2-ethylhexanoate [Al(C 7 h 15 COO) 3 ], Gallium 2-ethylhexanoate [Ga(C 7 h 15 COO) 3 ], cerium 2-ethylhex...

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PUM

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Abstract

The invention provides a preparation method of a broadband gradient LED (light-emitting diode) fluorescent film, which adopts chemical solution coating and comprises a sol-gel process and a process of preparing the LED broadband gradient fluorescent powder film by organic compound decomposition. The method is implemented by depositing a uniform broadband gradient and multicolor (red, green, blue and the like) multilayer LED fluorescent film on an LED device or LED lamp shade lining. The broadband gradient and multicolor (red, green, blue and the like) multilayer LED fluorescent film prepared by the method has uniform color temperature in all directions. The method can be used for manufacturing and mass production of white LED devices with low cost, high photoelectric conversion rate and high color rendering index (approximate to sunlight).

Description

technical field [0001] The invention belongs to a preparation method of an LED fluorescent film, in particular to a method for preparing an LED broadband gradient phosphor film by chemical solution coating including a sol-gel method and an organic compound decomposition method. Background technique [0002] Since Nick Holonyak Jr. of General Electric Company developed the first practical visible light-emitting diode LED in 1962, especially the breakthrough of the third-generation semiconductor material GaN technology in the late 1990s triggered Since the third revolution in the field of lighting, after 50 years of development, LED has small size, high brightness, low power consumption (1 / 8 to 1 / 10 of incandescent bulbs, 1 / 2 of energy-saving fluorescent lamps), long life Long life (more than 120,000 hours), high efficiency, low heat, environmental protection (no Hg, Pb and other pollution), low-voltage low-current start-up, fast response, shock and impact resistance, planar p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B29/68C30B19/00
CPCC30B29/22C23C18/1208C23C18/1225C23C18/1254C30B19/00C30B29/68
Inventor 李廷凯李晴风张拥军陈建国唐冬汉虞爱民谭丽霞李勇
Owner HUNAN SCI & TECH RES & DEV CENT
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