Fin field effect transistor and method of forming the same

Abstract

The invention provides a finned field-effect transistor (FET) and a forming method thereof. The forming method of the finned FET comprises the steps: providing an on-insulator semiconductor substrate, wherein the on-insulator semiconductor substrate comprises a semiconductor layer; patterning the semiconductor layer until fin part structures, of which the upper surfaces are level, are formed; forming mask layers at the middle parts of the upper surfaces of the fin part structures; carrying out first-time anisotropic etching on the fin part structures in a manner of taking the mask layers as masks until the exposed upper surfaces of the fin part structures are etched into curved surfaces; removing the mask layers. The forming method is simple in process and low in process cost, and the formed finned FET is free from the problem of serious self-heating effect.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] As the feature size of semiconductor devices enters the nanometer scale, fin field effect transistors (FinFETs) are introduced to optimize the electrical characteristics of the devices. [0003] However, the existing fin field effect transistor has relatively serious self-heating effect. The self-heating effect of the fin field effect transistor will reduce the on-state current of the transistor, increase the leakage current, reduce the switching ratio of the transistor, cause the degradation of the performance of the transistor, the circuit and even the system, and cause serious reliability problems. [0004] Please refer to figure 1 , the existing fin field effect transistor includes a source 11 in silicon-on-insulator (SOI, not shown), a drain 12, a fin structure 13 and a gate 14...

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Problems solved by technology

[0006] The problem solved by the present invention is to provide a fin field effect transistor and its forming method to solve the serious problem of the self-heating effect of the fin field effect transistor and improve the reliability of the fin field effect transistor

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