Phase shift mask and method of making the same, array substrate and method of making the same
An array substrate and phase-shift mask technology, which is applied in the field of phase-shift mask and its manufacturing method, array substrate and its manufacturing, can solve the problem of dense signal lines in the fan-out area and sparse signal lines in the pixel area, etc. problem, achieve the effect of reducing the line width difference and reducing the difference
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Embodiment 1
[0082] The manufacturing method of the phase-shift mask plate of the present embodiment comprises the following steps:
[0083] Step a1, such as Figure 8 As shown in (1), a substrate 1 is provided, and the substrate 1 may be a glass substrate or a quartz substrate. On the substrate 1, a phase shift layer 2 and an opaque layer 3 are sequentially formed, the material of the opaque layer 3 is chromium, and a photoresist 4 is coated on the opaque layer 3;
[0084] Step a2, such as Figure 8 As shown in (2), remove the photoresist outside the light-shielding pattern area after development, and etch the phase shift layer 2 and the light-impermeable layer 3 outside the light-shielding pattern area by dry etching;
[0085] Step a3, such as Figure 8 As shown in (3), the remaining opaque layer 3 is etched and thinned by a wet etching process;
[0086] Step a4, such as Figure 8 Shown in (4), remove remaining photoresist;
[0087] Step a5, such as Figure 8 Shown in (5), coat ph...
Embodiment 2
[0093] The manufacturing method of the phase-shift mask plate of the present embodiment comprises the following steps:
[0094] Step b1, such as Figure 8 As shown in (1), a substrate 1 is provided, and the substrate 1 may be a glass substrate or a quartz substrate. On the substrate 1, a phase shift layer 2 and an opaque layer 3 are sequentially formed, the material of the opaque layer 3 is chromium, and a photoresist 4 is coated on the opaque layer 3;
[0095] Step b2, such as Figure 8 As shown in (2), remove the photoresist outside the light-shielding pattern area after development, and etch the phase shift layer 2 and the light-impermeable layer 3 outside the light-shielding pattern area by dry etching;
[0096] Step b3, such as Figure 8As shown in (3), the remaining opaque layer 3 is etched and thinned by a wet etching process;
[0097] Step b4, such as Figure 8 Shown in (4), remove remaining photoresist;
[0098] Step b5, such as Figure 8 Shown in (5), coat pho...
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